Fast Switching 650V N Channel Power MOSFET MIRACLE POWER MPF10N65 with 10A Continuous Drain Current
Key Attributes
Model Number:
MPF10N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
800mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
6.6pF
Number:
1 N-channel
Pd - Power Dissipation:
40W
Output Capacitance(Coss):
134pF
Input Capacitance(Ciss):
1.595nF
Gate Charge(Qg):
31.9nC@10V
Mfr. Part #:
MPF10N65
Package:
TO-220F
Product Description
MPF10N65 N-Channel Power MOSFET
The MPF10N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance power applications. It features a 650V breakdown voltage, a continuous drain current of 10A, and a low on-resistance of 0.80 (Typ.) at VGS = 10V. Key advantages include low Crss, fast switching speeds, and 100% avalanche tested for enhanced reliability. This MOSFET is suitable for various applications such as adapters, LCD/PDP adapters, and e-bike chargers.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Model: MPF10N65
- Technology: Miracle Technology
- Package: TO-220F
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | 650V, 10A, 0.80@VGS = 10V | |||||
| Low Crss | Yes | |||||
| Fast Switching | Yes | |||||
| Avalanche Tested | 100% | |||||
| Application | ||||||
| Adapter | Yes | |||||
| LCD/PDP Adapter | Yes | |||||
| E-Bike Charger | Yes | |||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 650 | V | |||
| VGS | Gate-Source Voltage | -30 | 30 | V | ||
| ID | Drain Current-Continuous, TC =25C | 10 | A | |||
| ID | Drain Current-Continuous, TC =100C | 5.5 | A | |||
| IDM | Drain Current-Pulsed | 40 | A | |||
| PD | Maximum Power Dissipation @ TJ =25C | 40 | W | |||
| EAS | Single Pulsed Avalanche Energy | 405 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | Max. | 3.12 | C/W | ||
| RJA | Thermal Resistance Junction-Ambient | Max. | 62.5 | C/W | ||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | - | 4 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID =5A | - | 0.80 | 1.00 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 1595 | - | pF |
| Coss | Output Capacitance | - | 134 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 6.6 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325V, ID =10A, RG = 25,VGS=10V | - | 25 | - | ns |
| tr | Turn-On Rise Time | - | 21 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 50 | - | ns | |
| tf | Turn-Off Fall Time | - | 23 | - | ns | |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS = 325V, ID =10A, VGS = 10V | - | 31.9 | - | nC |
| Qgs | Gate-Source Charge | - | 8.1 | - | nC | |
| Qgd | Gate-Drain Charge | - | 11.9 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 10 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 40 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 10A | - | - | 1.4 | V |
| Trr | Body Diode Reverse Recovery Time | di/dt=100A/us, IS=10A,VGS=0V | - | 498 | - | ns |
| Qrr | Reverse Recovery Charge | - | 3039 | - | nC | |
Notes:
a. TJ=+25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. Pulse width300us; duty cycle2%
d. L=10mH, VDD=50V,Ias=9A,RG=25 Starting TJ=25
2410122025_MIRACLE-POWER-MPF10N65_C17701985.pdf
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