200V N Channel Enhanced MOSFET Minos MP40N20 Designed for High Speed Switching and SMPS Applications
Key Attributes
Model Number:
MP40N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
40A
RDS(on):
50mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
101pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.8nF
Pd - Power Dissipation:
63.7W
Gate Charge(Qg):
154nC@160V
Mfr. Part #:
MP40N20
Package:
TO-220
Product Description
Product Description
The MP40N20 is a 200V N-Channel Enhanced MOSFET utilizing advanced MOSFET technology to reduce conduction loss, improve switching performance, and enhance avalanche energy. This transistor is suitable for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key features include proprietary new planar technology, low on-resistance (RDS(ON) typ.=50m@VGS=10V), minimized switching loss due to low gate charge, and a fast-recovery body diode.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen, China
- Material: Silicon N-Channel Enhanced MOSFET
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 200 | V | |
| Continuous Drain Current | ID | TC = 25C | 40 | A |
| Pulsed Drain Current (note1) | IDM | 160 | A | |
| Gate-Source Voltage | VGSS | 20 | V | |
| Single Pulse Avalanche Energy (note1) | EAS | 191 | mJ | |
| Avalanche Current (note1) | IAS | 31 | A | |
| Repetitive Avalanche Energy (note1) | EAR | 124 | mJ | |
| Power Dissipation (TC = 25C) | PD | TO-220 | 63.7 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55~+150 | C | |
| Thermal Resistance | ||||
| Thermal Resistance, Junction-to-Case | RthJC | TO-220 | 1.2 | C/W |
| Thermal Resistance, Junction-to-Ambient | RthJA | TO-220 | 60 | C/W |
| Specifications | ||||
| Static Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 200 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V, VGS = 0V, TJ= 25 | -- | 1 A |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V, VGS=0V, TJ= 125 | -- | 100 A |
| Gate-Source Leakage | IGSS | VGS = 20VVDS = 0V | -- | 100 nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 4.0 V |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 20A (Note4) | 0.05 | 0.06 |
| Forward Transconductance | gfs | VDS = 25V, ID = 20A (Note4) | 16 | S |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, f=1.0MHz | 2800 | pF |
| Output Capacitance | Coss | 355 | pF | |
| Reverse Transfer Capacitance | Crss | 101 | pF | |
| Total Gate Charge | Qg | VDD = 160V, ID= 40A, (Note 2) | 154 | nC |
| Gate-Source Charge | Qgs | 13 | nC | |
| Gate-Drain Charge | Qg | 58 | nC | |
| Turn-on Delay Time | td(on) | VDD=160V, ID=40A, VGS =15V.RG=25 | 46 | ns |
| Turn-on Rise Time | tr | 54 | ns | |
| Turn-off Delay Time | td(off) | 360 | ns | |
| Turn-off Fall Time | tf | 96 | ns | |
| Drain-Source Body Diode Characteristics | ||||
| Continuous Source Current | ISD | Integral PN-diode in MOSFET | 40 | A |
| Pulsed Source Current | ISM | 160 | A | |
| Body Forward Voltage | VSD | IS = 20A, VGS = 0V | 1.4 | V |
| Reverse Recovery Time | trr | VGS = 0V,IF = 10A, diF/dt =100A /s | 152 | ns |
| Reverse Recovery Charge | Qrr | 1 | C | |
2410121956_Minos-MP40N20_C5121604.pdf
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