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quality 100V N Channel Power MOSFET Minos MDT15N10 Featuring Low Gate Charge and High EAS for Power Electronics factory
quality 100V N Channel Power MOSFET Minos MDT15N10 Featuring Low Gate Charge and High EAS for Power Electronics factory

100V N Channel Power MOSFET Minos MDT15N10 Featuring Low Gate Charge and High EAS for Power Electronics

Key Attributes
Model Number: MDT15N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+175℃
RDS(on):
115mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Output Capacitance(Coss):
110pF
Input Capacitance(Ciss):
680pF@25V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
MDT15N10
Package:
TO-252
Product Description

Product Overview

The MDT15N10 is a 100V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The TO-252 package provides excellent heat dissipation.

Product Attributes

  • Brand: MNS (derived from www.mns-kx.com)
  • Origin: Shenzhen Minos (derived from CONTACT information)
  • Package: TO-252

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=250A100--V
VGS=0V, ID=250A---V
Zero Gate Voltage Drain CurrentIDSSVDS=100V,VGS=0V--1A
Gate-Body Leakage CurrentIGSSVGS=20V,VDS=0V--100nA
Gate Threshold VoltageVGS(th)VDS=VGS,ID=250A11.82.4V
Drain-Source On-State ResistanceRDS(ON)VGS=10V, ID=5A-8090m
VGS=4.5V, ID=5A90115-m
Forward TransconductancegFSVDS=25V,ID=3.6A-5-S
Input CapacitanceClssVDS=25V,VGS=0V, f=1.0MHz-680-pF
Output CapacitanceCossVDS=25V,VGS=0V, f=1.0MHz-110-pF
Reverse Transfer CapacitanceCrssVDS=25V,VGS=0V, f=1.0MHz-85-pF
Turn-on Delay Timetd(on)VDD=50V, ID=5A, VGS=10V,RGEN=2.5-10-nS
Turn-on Rise TimetrVDD=50V, ID=5A, VGS=10V,RGEN=2.5-7-nS
Turn-Off Delay Timetd(off)VDD=50V, ID=5A, VGS=10V,RGEN=2.5-34-nS
Turn-Off Fall TimetfVDD=50V, ID=5A, VGS=10V,RGEN=2.5-9-nS
Total Gate ChargeQgVDS=80V,ID=3A, VGS=10V-16-nC
Gate-Source ChargeQgsVDS=80V,ID=3A, VGS=10V-4-nC
Gate-Drain ChargeQgVDS=80V,ID=3A, VGS=10V-5-nC
Diode Forward VoltageVSDVGS=0V,IS=15A--1.2V
Drain-Source VoltageVDS---100V
Gate-Source VoltageVGS---20V
Drain Current-ContinuousID---15A
Drain Current-PulsedIDM---40A
Maximum Power DissipationPDTc=25--31W
Single pulse avalanche energyEASTj=25,VDD=50V,VGS=10V,L=0.5mH,Rg=25-21-mJ
Operating Junction and Storage Temperature RangeTJ,TSTG--55-175
Thermal Resistance,Junction-to-CaseRJC--4.8-/W

2411220027_Minos-MDT15N10_C2980273.pdf

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