Power MOSFET Minos IRFB3077 80V N Channel Featuring High Density Cell and Low RDS ON for Power Switching
Key Attributes
Model Number:
IRFB3077
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
810pF
Number:
1 N-channel
Pd - Power Dissipation:
270W
Gate Charge(Qg):
257nC
Mfr. Part #:
IRFB3077
Package:
TO-220
Product Description
Product Overview
The IRFB3077 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The TO-220 package provides excellent heat dissipation.
Product Attributes
- Brand: MNS-KX (implied from www.mns-kx.com)
- Origin: Shenzhen, China (implied from contact information)
- Package: TO-220
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 80 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 200 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 800 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 270 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 1600 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 0.41 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 80 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=80V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=50A (Note 3) | 3.5 | 4 | m | |
| Forward Transconductance | gFS | VDS=5V,ID=15A | 17 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | 13200 | pF | ||
| Output Capacitance | Coss | 950 | pF | |||
| Reverse Transfer Capacitance | Crss | 810 | pF | |||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=40V, ID=40A, VGS=10V,RGEN=3 (Note 4) | 26 | nS | ||
| Turn-on Rise Time | tr | 20 | nS | |||
| Turn-Off Delay Time | td(off) | 50 | nS | |||
| Turn-Off Fall Time | tf | 18 | nS | |||
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=64V,ID=80A, VGS=10V | 257 | nC | ||
| Gate-Source Charge | Qgs | 76 | nC | |||
| Gate-Drain Charge | Qg d | 80 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=80A | 1.2 | V | ||
2410122012_Minos-IRFB3077_C20624237.pdf
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