High Current Capacity MOSFET MIRACLE POWER MS0005C with 100V Voltage and Low Gate Charge Technology
Key Attributes
Model Number:
MS0005C
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
260A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
269pF
Output Capacitance(Coss):
2.099nF
Input Capacitance(Ciss):
12.63nF
Pd - Power Dissipation:
284W
Gate Charge(Qg):
230nC@10V
Mfr. Part #:
MS0005C
Package:
TO-220
Product Description
Product Overview
The MS0005C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring 100V drain-source voltage and 260A continuous drain current. It offers excellent RDS(on) of 1.8m (Typ.) at VGS = 10V and low gate charge, enabled by advanced trench technology. This MOSFET is ideal for applications such as load switching, quick/wireless charging, motor driving, current switching in DC/DC & AC/DC (SR) subsystems, and power management in computing, CE, IE 4.0, and communications sectors. It is 100% EAS guaranteed.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Advanced Trench Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(on) | VGS = 10V | - | 1.8m | - | m | |
| Voltage Rating | - | 100 | - | V | ||
| Continuous Drain Current | TC = 25C | - | 260 | - | A | |
| Pulsed Drain Current | b | - | 1040 | - | A | |
| Single Pulsed Avalanche Energy | c | - | 1892 | - | mJ | |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | - | - | 100 | V | |
| VGS | Gate-Source Voltage | - | - | 20 | V | |
| ID | Drain Current-Continuous | TC = 25C | - | - | 260 | A |
| ID | Drain Current-Continuous | TC = 100C | - | - | 164 | A |
| IDM | Drain Current-Pulsed | b | - | - | 1040 | A |
| PD | Maximum Power Dissipation | TC = 25C | - | - | 284 | W |
| EAS | Single Pulsed Avalanche Energy | c | - | - | 1892 | mJ |
| TJ, TSTG | Operating and Store Temperature Range | -55 | - | 150 | C | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | - | 0.44 | - | C/W | |
| RJA | Thermal Resistance, Junction to Ambient | - | 37 | - | C/W | |
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 100 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 100V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.0 | - | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | - | 1.8 | 2.4 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | 2.4 | - | |
| Ciss | Input Capacitance | VDS = 60V, VGS = 0V, f = 1.0MHz | - | 12.63 | - | nF |
| Coss | Output Capacitance | - | 2099 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 269 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 20V, VGS = 10V, RL = 1.0 RGEN = 3.0 | - | 40 | - | ns |
| tr | Turn-On Rise Time | - | 67 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 131 | - | ns | |
| tf | Turn-Off Fall Time | - | 91 | - | ns | |
| Qg | Total Gate Charge | VDS = 20V, VGS = 0 to 10V, ID = 20A | - | 230 | - | nC |
| Qgs | Gate-Source Charge | - | 56 | - | nC | |
| Qgd | Gate-Drain Charge | - | 76 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 260 | A |
| ISM | Maximum Pulsed Current | - | - | 1040 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 1A | - | 0.7 | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 15A, dIF/dt = 100A/s | - | 113 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 15A, dIF/dt = 100A/s | - | 274 | - | nC |
2504151445_MIRACLE-POWER-MS0005C_C47361106.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
