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quality N Channel Enhancement Mode MOSFET MIRACLE POWER MU4004D with 100 Percent EAS Single Pulsed Avalanche factory
quality N Channel Enhancement Mode MOSFET MIRACLE POWER MU4004D with 100 Percent EAS Single Pulsed Avalanche factory

N Channel Enhancement Mode MOSFET MIRACLE POWER MU4004D with 100 Percent EAS Single Pulsed Avalanche

Key Attributes
Model Number: MU4004D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
RDS(on):
7.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
138pF
Pd - Power Dissipation:
114W
Input Capacitance(Ciss):
2.443nF
Output Capacitance(Coss):
167pF
Gate Charge(Qg):
48nC
Mfr. Part #:
MU4004D
Package:
TO-252
Product Description

Product Overview

The MU4004D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This advanced trench technology MOSFET offers excellent RDS(on) and low gate charge, with a 40V drain-source voltage and 60A continuous drain current. It is guaranteed 100% EAS (Single Pulsed Avalanche Energy) and is suitable for applications such as load switching, PWM applications, and power management.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Advanced Trench Technology
  • Channel Type: N-Channel Enhancement Mode
  • EAS Guarantee: 100%

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings (Tc = 25C unless otherwise noted)
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous TC = 25C 60 A
ID Drain Current-Continuous TC = 100C 38 A
IDM Drain Current-Pulsed 240 A
PD Maximum Power Dissipation TC = 25C 114 W
EAS Single Pulsed Avalanche Energy 115 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 1.1 C/W
RJA Thermal Resistance, Junction to Ambient 37 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 40 - - V
IDSS Zero Gate Voltage Drain Current VDS = 40V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.0 2.0 5 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 30A - 5.9 7.3 m
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 20A - 7.1 8.9 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - TBD -
Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1.0MHz - 2443 - pF
Coss Output Capacitance - 167 - pF
Crss Reverse Transfer Capacitance - 138 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0 - 10 - ns
tr Turn-On Rise Time - 28 - ns
td(off) Turn-Off Delay Time - 40 - ns
tf Turn-Off Fall Time - 7 - ns
Qg Total Gate Charge VDS = 20V, VGS = 0 to 10V, ID = 20A - 48 - nC
Qgs Gate-Source Charge - 10 - -
Qgd Gate-Drain Charge - 10 - -
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 60 A
ISM Maximum Pulsed Current - - 240 -
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 11 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 5 - nC

2504151445_MIRACLE-POWER-MU4004D_C47361181.pdf

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