Switching MOSFET MIRACLE POWER MJF30N65F with 105 Milliohm Typical On Resistance at 10V Gate Voltage
Key Attributes
Model Number:
MJF30N65F
Product Custom Attributes
Mfr. Part #:
MJF30N65F
Package:
TO-220F
Product Description
MJF30N65F N-Channel Power MOSFET
Product Overview
The MJF30N65F is an N-Channel Power MOSFET developed by Miracle Technology Co., Ltd. Utilizing advanced Super Junction Technology, this MOSFET offers a 650V drain-source voltage and a continuous drain current of 30A, with a typical on-resistance of 105m at VGS = 10V. It is designed for easy gate switching control and is 100% avalanche tested. Key applications include server power, telecom power, EV charging, solar inverters, UPS, and various power supply topologies such as boost PFC, half bridge, asymmetric half bridge, series resonance half bridge, and full bridge.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Super Junction Technology
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Features | |||||
| Voltage/Current/Resistance | VGS = 10V | - | 105 | - | m (RDS(ON)(Typ.)) |
| Drain-Source Voltage | - | - | - | 650 | V |
| Drain Current (Continuous) | TC = 25C | - | - | 30 | A |
| 100% Avalanche Tested | - | Yes | |||
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | TC = 25C | - | - | 650 | V |
| Gate-Source Voltage (VGS) | - | - | 30 | - | V |
| Drain Current-Continuous (ID) | TC = 25C | - | - | 30 | A |
| Drain Current-Pulsed (IDM)b | - | - | - | 90 | A |
| Maximum Power Dissipation (PD) | TC = 25C | - | - | 36.7 | W |
| Peak Diode Recovery dv/dt (dv/dt)c | - | - | - | 50 | V/ns |
| Single Pulsed Avalanche Energy (EAS)d | - | - | - | 1140 | mJ |
| Operating and Store Temperature Range (TJ, TSTG) | - | -55 | - | 150 | C |
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RJC) | - | - | 3.4 | - | C/W |
| Thermal Resistance, Junction to Ambient (RJA) | - | - | 62 | - | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250A | 650 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 650V, VGS = 0V | - | - | 2 | A |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250A | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance (RDS(on))c | VGS = 10V, ID = 15A | - | 105 | 120 | m |
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | f = 1.0MHz | - | 12.6 | - | |
| Input Capacitance (Ciss) | VDS = 100V, VGS = 0V, f = 1.0MHz | - | 2566 | - | pF |
| Output Capacitance (Coss) | - | - | 90.8 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 1.8 | - | pF |
| On Characteristics (Dynamic) | |||||
| Turn-On Delay Time (td(on)) | VDD = 400V, VGS = 10V, ID = 19A, RG = 2 | - | 32 | - | ns |
| Turn-On Rise Time (tr) | - | - | 62 | - | ns |
| Turn-Off Delay Time (td(off)) | - | - | 100 | - | ns |
| Turn-Off Fall Time (tf) | - | - | 59 | - | ns |
| Total Gate Charge (Qg) | VDD = 400V, VGS = 0 to 10V, ID = 19A | - | 58.3 | - | nC |
| Gate-Source Charge (Qgs) | - | - | 18.8 | - | nC |
| Gate-Drain Charge (Qgd) | - | - | 20.6 | - | nC |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IF = 1A | - | 0.67 | - | V |
| Body Diode Reverse Recovery Time (Trr) | VR = 400V, IF = 17A, dIF/dt = 100A/s | - | 128.8 | - | ns |
| Body Diode Reverse Recovery Charge (Qrr) | VR = 400V, IF = 17A, di/dt = 100A/s | - | 0.821 | - | C |
| Peak reverse recovery current (Irrm) | VR = 400V, IF = 17A, di/dt = 100A/s | - | 12.06 | - | A |
Notes:
a. TJ = +25 to +150 .
b. Repetitive rating: pulse width limited by maximum junction temperature.
c. Pulse width 300s; duty cycle 2%.
d. L = 10mH, VDD = 100V, IAS = 15.1A, RG = 25 Starting TJ = 25 .
2504151445_MIRACLE-POWER-MJF30N65F_C47361041.pdf
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