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quality N Channel Power MOSFET MIRACLE POWER MPD18N20A Suitable for Half Bridge Lamp Ballasts and UPS Systems factory
quality N Channel Power MOSFET MIRACLE POWER MPD18N20A Suitable for Half Bridge Lamp Ballasts and UPS Systems factory

N Channel Power MOSFET MIRACLE POWER MPD18N20A Suitable for Half Bridge Lamp Ballasts and UPS Systems

Key Attributes
Model Number: MPD18N20A
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
RDS(on):
150mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
15pF
Output Capacitance(Coss):
92pF
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
1.085nF
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
MPD18N20A
Package:
TO-252
Product Description

Product Overview

The MPD18N20A is a high-performance N-Channel Power MOSFET from Miracle Technology Co., Ltd. Engineered with advanced technology, it offers a robust 200V breakdown voltage and 18A continuous drain current capability. Key features include low Crss for fast switching and 100% avalanche testing for enhanced reliability. This MOSFET is ideal for high-efficiency switch mode power supplies, electronic lamp ballasts based on half bridge configurations, and Uninterruptible Power Supplies (UPS).

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Power MOSFET
  • Model: MPD18N20A

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, RDS(ON) VGS = 10V 0.115 0.15
Voltage, Current, RDS(ON) VGS = 10V, ID = 9A 0.115 0.15
Drain-Source Voltage 200 V
Drain Current-Continuous TC = 25C 18 A
Drain Current-Continuous TC = 100C 11.4 A
Drain Current-Pulsed 72 A
Maximum Power Dissipation TJ = 25C 100 W
Peak Diode Recovery dv/dt 5.5 V/ns
Single Pulsed Avalanche Energy 423 mJ
Operating and Store Temperature Range -55 150 C
Electrical Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 200 - - V
IDSS Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 2.0 - 4.0 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 9A - 0.115 0.15
Ciss Input Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz - 1085 - pF
Coss Output Capacitance - 92 - pF
Crss Reverse Transfer Capacitance - 15 - pF
td(on) Turn-On Delay Time VDD = 100V, ID =18A, VGS=10V,RGEN=24 - 15 - ns
tr Turn-On Rise Time - 46 - ns
td(off) Turn-Off Delay Time - 58 - ns
tf Turn-Off Fall Time - 41 - ns
Qg Total Gate Charge VDS = 100V, ID =18A, VGS = 10V - 25 - nC
Qgs Gate-Source Charge - 7.3 - nC
Qgd Gate-Drain Charge - 9.1 - nC
IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 18 A
ISM Maximum Pulsed Current VGS = 0V - - 72 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 9A - - 1.2 V
Trr Body Diode Reverse Recovery Time IS=18A,VGS = 0V, dIF/dt=100A/us - 195 - ns
Qrr Body Diode Reverse Recovery Charge IS=18A,VGS = 0V, dIF/dt=100A/us - 931 - nC
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - 1.25 - C/W
RJA Thermal Resistance, Junction to Ambient - 62.5 - C/W

2504151445_MIRACLE-POWER-MPD18N20A_C47361150.pdf

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