N Channel Power MOSFET Minos MP180N06 60V 180A Ideal for Uninterruptible Power Supplies and Circuits
Key Attributes
Model Number:
MP180N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
810pF
Number:
1 N-channel
Input Capacitance(Ciss):
13.2nF@25V
Pd - Power Dissipation:
270W
Gate Charge(Qg):
257nC@10V
Mfr. Part #:
MP180N06
Package:
TO-220
Product Description
Product Overview
The MP180N06 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design, fully characterized avalanche voltage and current, and good stability contribute to its performance. The device is available in TO-220 and TO-263 packages, designed for effective heat dissipation.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen Minos ()
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 180 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 800 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 270 | W | |||
| Single pulse avalanche energy (Note 2) | EAS | 1600 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 175 | ||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.41 | /W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 80 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=50A | - | 3.5 | 4 | m |
| Forward Transconductance | gFS | VDS=5V,ID=15A | - | 17 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 13200 | - | pF |
| Output Capacitance | Coss | - | 950 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 810 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=40V, ID=40A, VGS=10V,RGEN=3 | - | 26 | - | nS |
| Turn-on Rise Time | tr | - | 20 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 50 | - | nS | |
| Turn-Off Fall Time | tf | - | 18 | - | nS | |
| Total Gate Charge | Qg | VDS=64V,ID=80A VGS=10V | - | 257 | - | nC |
| Gate-Source Charge | Qgs | - | 76 | - | nC | |
| Gate-Drain Charge | Qgd | - | 80 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=80A | - | - | 1.2 | V |
Ordering Information
| Ordering Code | Package | Packing |
|---|---|---|
| MP180N06-P | TO-220 | Tube |
| MP180N06-S | TO-263 | Reel |
Package Dimensions (TO-220)
| Item | MIN (mm) | MAX (mm) |
|---|---|---|
| A | 9.60 | 10.6 |
| B | 15.0 | 16.0 |
| B1 | 8.90 | 9.50 |
| C | 4.30 | 4.80 |
| C1 | 2.30 | 3.10 |
| D | 1.20 | 1.40 |
| E | 0.70 | 0.90 |
| F | 0.30 | 0.60 |
| G | 1.17 | 1.37 |
| H | 2.70 | 3.80 |
| L | 12.6 | 14.8 |
| N | 2.34 | 2.74 |
| Q | 2.40 | 3.00 |
| P | 3.50 | 3.90 |
Package Dimensions (TO-263)
| Item | MIN (mm) | MAX (mm) |
|---|---|---|
| A | 9.80 | 10.40 |
| B | 8.90 | 9.50 |
| B1 | 0 | 0.10 |
| C | 4.40 | 4.80 |
| D | 1.16 | 1.37 |
| E | 0.70 | 0.95 |
| F | 0.30 | 0.60 |
| G | 1.07 | 1.47 |
| H | 1.30 | 1.80 |
| K | 0.95 | 1.37 |
| L1 | 14.50 | 16.50 |
| L2 | 1.60 | 2.30 |
| I | 0 | 0.2 |
| Q | 0° | 8° |
| R | 0.4 | |
| N | 2.39 | 2.69 |
2410122013_Minos-MP180N06_C5121609.pdf
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