80V N Channel Power MOSFET Minos MPG80N08 with Excellent Heat Dissipation and High ESD Capability
Key Attributes
Model Number:
MPG80N08
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
12mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
1 N-channel
Input Capacitance(Ciss):
3nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
64nC@10V
Mfr. Part #:
MPG80N08
Package:
TO-220
Product Description
Product Overview
The MPG80N08 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower Rdson, and good stability with high EAS. The package is designed for effective heat dissipation.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen, China
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Product Code | Package | VDS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | EAS (mJ) | PD (W) @ Tc=25 | RJC (/W) |
| MPG80N08-P | TO-220 | 80 | 80 | < 14 | 280 | 125 | 1.2 |
| MDT80N08 | TO-252-2L | 80 | 80 | < 14 | 280 | 125 | Not specified |
2410122013_Minos-MPG80N08_C5890266.pdf
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