Power MOSFET Minos MPG08N68S Featuring High EAS and Excellent Thermal Performance for Industrial Circuits
Key Attributes
Model Number:
MPG08N68S
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
6.5mΩ@10V,45A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
180pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
3.2nF@30V
Pd - Power Dissipation:
125W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
MPG08N68S
Package:
TO-263
Product Description
Product Overview
The MPG08N68 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Its high density cell design ensures ultra-low Rdson, and the special process technology provides high ESD capability and good stability with high EAS. The device is fully characterized for avalanche voltage and current, and its excellent package design ensures good heat dissipation.
Product Attributes
- Brand: MNS (implied from www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd. (implied from contact information)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 68 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 100 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 340 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 125 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 370 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 68 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=68V,VGS=0V | - | - | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=45A (Note 3) | - | 6.5 | 7.5 | mΩ |
| Forward Transconductance | GFS | VDS=10V,ID=20A | - | 20 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=30V,VGS=0V, F=1.0MHz | - | 3200 | - | pF |
| Output Capacitance | Coss | - | 440 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 180 | - | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=30A, VGS=10V,RGEN=6Ω (Note 4) | - | 16 | - | nS |
| Turn-on Rise Time | tr | - | 95 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 47 | - | nS | |
| Turn-Off Fall Time | tf | - | 31 | - | nS | |
| Total Gate Charge | Qg | VDS=30V,ID=20A, VGS=10V | - | 40 | - | nC |
| Gate-Source Charge | Qgs | - | 11 | - | nC | |
| Gate-Drain Charge | Qg d | - | 15 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=90A (Note 3) | - | - | 1.2 | V |
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RθJC | 1.2 | °C/W | |||
2410122013_Minos-MPG08N68S_C5240684.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
