Power MOSFET with 900V Breakdown Voltage and Low Reverse Transfer Capacitance MIRACLE POWER MPC09N90
Key Attributes
Model Number:
MPC09N90
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
9A
RDS(on):
1.1Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
11.3pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.716nF@25V
Pd - Power Dissipation:
41W
Gate Charge(Qg):
57.9nC@10V
Mfr. Part #:
MPC09N90
Package:
TO-220
Product Description
Product Overview
The MPC09N90 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. designed for power switch circuits in adaptors and chargers. It features a high breakdown voltage of 900V and a continuous drain current of 9A. Key advantages include low ON resistance (RDS(ON) Typ. = 0.9 @ VGS = 10V), low gate charge, low reverse transfer capacitance, and fast switching characteristics. The device is 100% avalanche tested, ensuring reliability in demanding applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | 900V, 9A, 0.9@VGS = 10V | |||||
| Low ON Resistance | ||||||
| Low Gate Charge | ||||||
| Low Reverse Transfer Capacitance | ||||||
| Fast Switching | ||||||
| 100% Avalanche Tested | ||||||
| Application | Power switch circuit of adaptor and charger | |||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 900 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 9 | A | |||
| ID | Drain Current-Continuous, TC =100C | 5.4 | A | |||
| IDM | Drain Current-Pulsed | b | 36 | A | ||
| PD | Maximum Power Dissipation @ TJ =25C | 41 | W | |||
| EAS | Single Pulsed Avalanche Energy | d | 1035 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | Max. | 3.02 | C/W | ||
| RJA | Thermal Resistance Junction-Ambient | Max. | 62.5 | C/W | ||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 900 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 900V, VGS = 0V | - | - | 25 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 10 | A |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | - | 4 | V |
| RDS(on) | Static Drain-Source On- Resistance | c, VGS = 10V, ID =4.5A | - | 0.9 | 1.1 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 2716 | - | pF |
| Coss | Output Capacitance | - | 211 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 11.3 | - | pF | |
| On Characteristics (Switching) | ||||||
| td(on) | Turn-On Delay Time | VDD = 450V, ID =9A, RG = 10,VGS=10V | - | 30.4 | - | ns |
| tr | Turn-On Rise Time | - | 41.6 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 82 | - | ns | |
| tf | Turn-Off Fall Time | - | 52 | - | ns | |
| Qg | Total Gate Charge | VDS = 720V, ID =9A, VGS = 10V | - | 57.9 | - | nC |
| Qgs | Gate-Source Charge | - | 10.6 | - | nC | |
| Qgd | Gate-Drain Charge | - | 23.4 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 9 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 36 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 9A | - | - | 1.5 | V |
| trr | Reverse Recovery Time | IS=9A,Tj= 25 dIF/dt=100A/us, VGS=0V | - | 845 | - | ns |
| Qrr | Reverse Recovery Charge | - | 8.03 | - | uC | |
2408011701_MIRACLE-POWER-MPC09N90_C34373725.pdf
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