High current Minos IRFZ44NS Power MOSFET with tested avalanche voltage current and thermal stability
Key Attributes
Model Number:
IRFZ44NS
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
12mΩ@10V,25A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
30pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
910pF@25V
Pd - Power Dissipation:
87W
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
IRFZ44NS
Package:
TO-263
Product Description
Product Overview
The IRFZ44NS is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. It is 100% UIS and DVDS tested and comes in an excellent package for good heat dissipation.
Product Attributes
- Brand: MNS-KX (Shenzhen Minos)
- Certifications: 100% UIS TESTED, 100% DVDS TESTED
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 60 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 200 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 87 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 120 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 1.72 | /W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=25A (Note 3) | - | 12 | 15 | mΩ |
| Forward Transconductance | gFS | VDS=25V,ID=25A | - | 25 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V, VGS=0V, f=1.0MHz | - | 910 | - | pF |
| Output Capacitance | Coss | - | 100 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 30 | - | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V,RGEN=5Ω (Note 4) | - | 26 | - | nS |
| Turn-on Rise Time | tr | - | 6 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 52 | - | nS | |
| Turn-Off Fall Time | tf | - | 7 | - | nS | |
| Total Gate Charge | Qg | VDS=30V,ID=50A, VGS=10V | - | 31 | - | nC |
| Gate-Source Charge | Qgs | - | 9 | - | nC | |
| Gate-Drain Charge | Qg d | - | 5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=50A | - | - | 1.2 | V |
2410122013_Minos-IRFZ44NS_C7587862.pdf
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