N channel MOSFET Minos IRFR120NTR with advanced trench technology and excellent thermal performance
Key Attributes
Model Number:
IRFR120NTR
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+175℃
RDS(on):
120mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Input Capacitance(Ciss):
680pF
Output Capacitance(Coss):
110pF
Pd - Power Dissipation:
31W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
IRFR120NTR
Package:
TO-252
Product Description
Product Overview
The IRFR120NTR is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for efficient heat dissipation. This product is 100% UIS TESTED and 100% DVDS TESTED.
Product Attributes
- Brand: MNS (implied from www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd.
- Certifications: 100% UIS TESTED, 100% DVDS TESTED
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | (TA=25) | 13 | A | ||
| Drain Current-Pulsed | IDM | (Note 1) | 40 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 31 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 21 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RθJC | 4.8 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 μA | |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 1 | 1.8 | 2.4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=5A (Note 3) | - | 110 | 120 | mΩ |
| Forward Transconductance | gFS | VDS=25V,ID=3.6A | - | 5 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 680 | - | pF |
| Output Capacitance | Coss | - | 110 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 85 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, ID=5A, VGS=10V,RGEN=2.5Ω | - | 10 | - | nS |
| Turn-on Rise Time | tr | - | 7 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 34 | - | nS | |
| Turn-Off Fall Time | tf | - | 9 | - | nS | |
| Total Gate Charge | Qg | VDS=80V,ID=3A VGS=10V | - | 16 | - | nC |
| Gate-Source Charge | Qgs | - | 4 | - | nC | |
| Gate-Drain Charge | Qg | - | 5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=15A | - | - | 1.2 | V |
2410122012_Minos-IRFR120NTR_C20624229.pdf
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