N Channel Enhancement Mode MOSFET MIRACLE POWER MSB001Y for High Frequency Switching Applications
Key Attributes
Model Number:
MSB001Y
Product Custom Attributes
Drain To Source Voltage:
120V
Current - Continuous Drain(Id):
132A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10.4mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
32pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.849nF
Output Capacitance(Coss):
458pF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
94.7nC@10V
Mfr. Part #:
MSB001Y
Package:
PDFN5x6-8L
Product Description
Product Overview
The MSB001Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-frequency switching and synchronous applications, including DC/DC converters. It offers a robust and reliable performance with fast switching speeds. This device is available as a Green Device and is 100% EAS guaranteed.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Device Type: N-Channel Enhancement Mode MOSFET
- Technology: Miracle Technology
- Availability: Green Device Available
Technical Specifications
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | |||
|---|---|---|---|
| Symbol | Parameter | Rating | Unit |
| VDS | Drain-Source Voltage | 120 | V |
| VGS | Gate-Source Voltage | 20 | V |
| ID | Drain Current-Continuous, Tc =25C | 132 | A |
| ID | Drain Current-Continuous, Tc =100C | 83 | A |
| IDM | Drain Current-Pulsed a | 330 | A |
| EAS | Avalanche Energy, Single pulse b | 65 | mJ |
| IAS | Avalanche Current | 36 | A |
| PD | Maximum Power Dissipation @ Tc =25C | 125 | W |
| TSTG | Store Temperature Range | -55 to 150 | C |
| TJ | Operating Junction Temperature Range | -55 to 150 | C |
| Thermal Characteristics | ||||
|---|---|---|---|---|
| Symbol | Parameter | Typ. | Max. | Unit |
| RJC | Thermal Resistance Junction-Case | - | 1 | C/W |
| RJA | Thermal Resistance Junction-Ambient c | - | 48 | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
|---|---|---|---|---|---|---|
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 120 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 96V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 1.0 | - | 3.0 | V |
| RDS(on) | Static Drain-Source On- Resistance d | VGS = 10V, ID = 20A | - | 6 | 7.2 | m |
| RDS(on) | Static Drain-Source On- Resistance d | VGS = 4.5V, ID =10A | - | 8 | 10.4 | m |
| gfs | Forward Transconductance | VDS= 5V, ID= 10A | - | 36 | - | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 60V, VGS = 0V, f = 1.0MHz | - | 4849 | - | pF |
| Coss | Output Capacitance | - | - | 458 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 32 | - | pF |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 60V, ID =1A, RG = 1,VGS=10V | - | 14.6 | - | ns |
| tr | Turn-On Rise Time | - | - | 19.1 | - | ns |
| td(off) | Turn-Off Delay Time | - | - | 56.3 | - | ns |
| tf | Turn-Off Fall Time | - | - | 103.7 | - | ns |
| Qg | Total Gate Charge | VDS = 60V, ID = 20A, VGS = 4.5V | - | 47 | - | nC |
| Qg | Total Gate Charge | VDS = 60V, ID = 20A, VGS = 10V | - | 94.7 | - | nC |
| Qgs | Gate-Source Charge | - | - | 19.7 | - | - |
| Qgd | Gate-Drain Charge | - | - | 22.3 | - | - |
| Drain-Source Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V, Force Current | - | - | 114 | A |
| VSD | Drain-Source Diode Forward Voltage d | VGS = 0V, ISD = 10A | - | 0.75 | 1.1 | V |
| trr | Reverse Recovery Time | IF= 10A,VR=60V, di/dt=1A/us, TJ=25C | - | 73 | - | ns |
| Qrr | Reverse Recovery Charge | - | - | 138 | - | nC |
Notes:
- a: Max. current is limited by junction temperature.
- b: The EAS data shows Max. Rating. The test condition is VDD=50V,VGS=10V,L=0.1mH,IAS=23A.
- c: Surface Mounted on 1in FR-4 board with 1oz.
- d: Pulse test (pulse width300s, duty cycle2%).
- e: Guaranteed by design, not subject to production testing.
2410122015_MIRACLE-POWER-MSB001Y_C17702013.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
