Power MOSFET MIRACLE POWER MS0002Y Featuring Fast Switching and Low On Resistance for Power Conversion
Key Attributes
Model Number:
MS0002Y
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
91A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12.5mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
38pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.111nF
Output Capacitance(Coss):
579pF
Pd - Power Dissipation:
65.8W
Gate Charge(Qg):
43.3nC@10V
Mfr. Part #:
MS0002Y
Package:
PDFN5x6-8L
Product Description
Product Overview
The MS0002Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Engineered with Miracle Technology, this MOSFET offers a 100V drain-source voltage and a continuous drain current of 91A at 25C, with a low on-resistance of 6.5m (typ.) at VGS = 10V. It is designed for high-frequency switching and synchronous applications, including DC/DC converters. Key features include reliable and rugged construction, fast switching speed, and a green device option. It is 100% EAS guaranteed, ensuring robust performance in demanding environments.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MS Series
- Technology: Miracle Technology
- Device Type: N-Channel Enhancement Mode MOSFET
- Certifications: Green Device Available, 100% EAS Guaranteed
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | Tc = 25C unless otherwise noted | - | - | 100 | V |
| Gate-Source Voltage (VGS) | Tc = 25C unless otherwise noted | - | - | ±20 | V |
| Drain Current-Continuous (ID) | Tc = 25C | - | - | 91 | A |
| Drain Current-Continuous (ID) | Tc = 100C | - | - | 57 | A |
| Drain Current-Pulsed (IDM) | a | - | - | 106 | A |
| Avalanche Energy, Single pulse (EAS) | b | - | - | 45 | mJ |
| Avalanche Current (IAS) | - | - | - | 30 | A |
| Maximum Power Dissipation (PD) | @ Tc = 25C | - | - | 65.8 | W |
| Store Temperature Range (TSTG) | - | -55 | - | 150 | C |
| Operating Junction Temperature Range (TJ) | - | -55 | - | 150 | C |
| Thermal Characteristics | |||||
| Thermal Resistance Junction-Case (RJC) | Max | - | - | 1.9 | C/W |
| Thermal Resistance Junction-Ambient (RJA) | Maxc | - | - | 50 | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 80V, VGS = 0V | - | - | 1 | A |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = ±20V | - | - | ±100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID =250A | 1.0 | - | 3.0 | V |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = 20A (d) | - | 6.5 | 8 | m |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 4.5V, ID = 10A (d) | - | 9.5 | 12.5 | m |
| Forward Transconductance (gfs) | VDS= 5V, ID= 10A | - | 25.8 | - | S |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = 50V, VGS = 0V, Freq.= 1.0MHz | - | 2111 | - | pF |
| Output Capacitance (Coss) | - | - | 579 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 38 | - | pF |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDS = 30V, ID =1A, RG = 1,VGS=10V | - | 14.5 | - | ns |
| Turn-On Rise Time (tr) | - | - | 8.1 | - | ns |
| Turn-Off Delay Time (td(off)) | - | - | 13.5 | - | ns |
| Turn-Off Fall Time (tf) | - | - | 107 | - | ns |
| Total Gate Charge (Qg) | VDS = 50V, ID = 20A, VGS = 4.5V | - | 22.5 | - | nC |
| Total Gate Charge (Qg) | VDS = 50V, ID = 20A, VGS = 10V | - | 43.3 | - | nC |
| Gate-Source Charge (Qgs) | - | - | 8.1 | - | - |
| Gate-Drain Charge (Qgd) | - | - | 10.8 | - | - |
| Drain-Source Diode Characteristics | |||||
| Gate Resistance (RG) | VDS=VGS=0V, Freq.=1MHz | - | 1 | - | |
| Continuous Source Current (IS) | VG=VD=0V, Force Current | - | - | 60 | A |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, ISD = 10A (d) | - | 0.75 | 1.1 | V |
| Reverse Recovery Time (trr) | IF= 10A,VR=50V di/dt=1A/us, TJ=25C | - | 45.5 | - | ns |
| Reverse Recovery Charge (Qrr) | - | - | 51.1 | - | nC |
Notes:
a: Max. current is limited by junction temperature.
b: The EAS data shows Max. Rating. The test condition is VDD=50V,VGS=10V,L=0.1mH,IAS=23A.
c: Surface Mounted on 1in2 FR-4 board with 1oz.
d: Pulse test (pulse width300us, duty cycle2%).
e: Guaranteed by design, not subject to production testing.
Application:
- High Frequency Switching and Synchronous
- DC/DC Converter
2410122015_MIRACLE-POWER-MS0002Y_C17702012.pdf
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