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quality Low On Resistance High Voltage N Channel MOSFET MIRACLE POWER MPF10N65A for Switching Power Supplies factory
quality Low On Resistance High Voltage N Channel MOSFET MIRACLE POWER MPF10N65A for Switching Power Supplies factory

Low On Resistance High Voltage N Channel MOSFET MIRACLE POWER MPF10N65A for Switching Power Supplies

Key Attributes
Model Number: MPF10N65A
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-
RDS(on):
800mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
-
Input Capacitance(Ciss):
1.357nF
Pd - Power Dissipation:
40W
Output Capacitance(Coss):
127pF
Gate Charge(Qg):
34nC@10V
Mfr. Part #:
MPF10N65A
Package:
TO-220F
Product Description

Product Overview

The MPF10N65A is an N-Channel Power MOSFET designed for high-efficiency power applications. It features a 650V breakdown voltage, a continuous drain current of 10A at 25C, and a low on-resistance of 0.80 (typ.) at VGS = 10V. Key advantages include low Crss and fast switching speeds, with 100% avalanche testing for enhanced reliability. This MOSFET is suitable for a variety of applications including adaptors, standby power supplies, switching power supplies, and LED power solutions.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: MPF Series
  • Technology: Miracle Technology
  • Channel Type: N-Channel

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage/Current/On-Resistance VGS = 10V - 0.80 0.95
Drain-Source Voltage - - 650 V
Gate-Source Voltage - - 30 V
ID Drain Current-Continuous (TC =25C) - - 10 A
ID Drain Current-Continuous (TC =100C) - - 6.5 A
IDM Drain Current-Pulsed - - 40 A
PD Maximum Power Dissipation (@ TJ =25C) - - 40 W
EAS Single Pulsed Avalanche Energy - - 405 mJ
TJ, TSTG Operating and Store Temperature Range -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - 3.12 - C/W
RJA Thermal Resistance, Junction to Ambient - 62.5 - C/W
Electrical Characteristics
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 650 - - V
IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 2 - 4 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 5A - 0.80 0.95
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 1357 - pF
Coss Output Capacitance - 127 - pF
Crss Reverse Transfer Capacitance - 12 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 325V, ID =10A, VGS=10V, RGEN=25 - 20 - ns
tr Turn-On Rise Time - 13 - ns
td(off) Turn-Off Delay Time - 85 - ns
tf Turn-Off Fall Time - 26 - ns
Qg Total Gate Charge VDS = 520V, ID =10A, VGS = 10V - 34 - nC
Qgs Gate-Source Charge - 6.5 - nC
Qgd Gate-Drain Charge - 15.5 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 10 A
ISM Maximum Pulsed Current VGS = 0V - - 40 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 10A - - 1.4 V
Trr Body Diode Reverse Recovery Time IS=10A,VGS = 0V, dIF/dt=100A/us - 320 - ns
Qrr Body Diode Reverse Recovery Charge - 3.7 - uC

2410122015_MIRACLE-POWER-MPF10N65A_C17701986.pdf

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