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quality Load Switch MOSFET MIRACLE POWER MU3008D Featuring N Channel Enhancement Mode and Advanced Trench Technology factory
quality Load Switch MOSFET MIRACLE POWER MU3008D Featuring N Channel Enhancement Mode and Advanced Trench Technology factory

Load Switch MOSFET MIRACLE POWER MU3008D Featuring N Channel Enhancement Mode and Advanced Trench Technology

Key Attributes
Model Number: MU3008D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
RDS(on):
10mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
105pF
Pd - Power Dissipation:
69W
Input Capacitance(Ciss):
1.002nF
Output Capacitance(Coss):
131pF
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
MU3008D
Package:
TO-252
Product Description

MU3008D N-Channel Enhancement Mode MOSFET

Product Overview
The MU3008D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology. It offers a drain-source voltage of 30V and a continuous drain current of 40A, with a typical on-resistance (RDS(ON)) of 7.4m at VGS = 10V. This MOSFET is designed for excellent RDS(ON) and low gate charge, with 100% EAS guaranteed. It is suitable for applications such as load switches, PWM applications, and power management.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Technology: Advanced Trench Technology

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings (Tc = 25C unless otherwise noted)
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
ID Drain Current-Continuous TC = 25C 40 A
ID Drain Current-Continuous TC = 100C 25 A
IDM Drain Current-Pulsed 160 A
PD Maximum Power Dissipation TC = 25C 69 W
EAS Single Pulsed Avalanche Energy 45 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 1.8 C/W
RJA Thermal Resistance, Junction to Ambient 32 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 30 - - V
IDSS Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = ±20V - - ±100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.0 1.7 2.5 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 20A - 7.4 10 m
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 10A - 11 15 m
Dynamic Characteristics
Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz - 1002 - pF
Coss Output Capacitance - 131 - pF
Crss Reverse Transfer Capacitance - 105 - pF
On Characteristics (Switching)
td(on) Turn-On Delay Time VDD = 15V, VGS = 10V, ID = 20A, RGEN = 3 - 6 - ns
tr Turn-On Rise Time - 19 - ns
td(off) Turn-Off Delay Time - 22 - ns
tf Turn-Off Fall Time - 5 - ns
Qg Total Gate Charge VDD = 15V, VGS = 0 to 10V, ID = 20A - 20 - nC
Qgs Gate-Source Charge - 4 - nC
Qgd Gate-Drain Charge - 5 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 40 A
ISM Maximum Pulsed Current - - 160 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, di/dt = 100A/s - 8 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, di/dt = 100A/s - 2 - nC

2504151445_MIRACLE-POWER-MU3008D_C47361159.pdf
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