MSKSEMI BT136S-800E MS TO-252 Package Thyristor Optimized for in Anion Generators and Hair Appliances
Key Attributes
Model Number:
BT136S-800E(MS)
Product Custom Attributes
Current - Gate Trigger(Igt):
25mA
Voltage - On State(Vtm):
1.6V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
35A
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BT136S-800E(MS)
Package:
TO-252
Product Description
Product Overview
The BT136S-XXE(MS) series of thyristors, featuring a parallel resistor between the Gate and Cathode, are specifically recommended for applications such as straight hair appliances, igniters, and anion generators. These devices offer robust performance with high repetitive peak off-state voltages and on-state currents.Product Attributes
- Brand: MSKSEMI
- Package Type: TO-252
Technical Specifications
| Model | Repetitive Peak Off-State Voltage (VDRM) | Repetitive Peak Reverse Voltage (VRRM) | RMS On-State Current (IT(RMS)) | Non-Repetitive Surge Peak On-State Current (ITSM) | It Value for Fusing | Critical Rate of Rise of On-State Current (dI/dt) | Peak Gate Current (IGM) | Average Gate Power Dissipation (PG(AV)) | Peak Gate Power (PGM) | Storage Junction Temperature Range (Tstg) | Operating Junction Temperature Range (Tj) | On-State Voltage (VTM) | Off-State Current (IDRM) | Off-State Current (IRRM) | Gate Trigger Current (IGT) | Gate Trigger Voltage (VGT) | Latching Current (IL) | Holding Current (IH) | Rate of Rise of Off-State Voltage (dV/dt) | Critical Rate of Rise of Commutation (dV/dt)c | Junction to Case Thermal Resistance (Rth(j-c)) | Junction to Ambient Thermal Resistance (Rth(j-a)) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BT136S-600E(MS) | 600 V | 600 V | 4 A | 35 A | 6.1 As | 50 A/s (--), 10 A/s () | 2 A | 0.5 W | 5 W | -40 to 150 | -40 to 125 | 1.6 V (at ITM=5.5A, tp=380s, Tj=25) | 5 A (at VD=VDRM, Tj=25) | 0.5 mA (at VR=VRRM, Tj=125) | Max 10 mA (Quadrant --), Max 25 mA (Quadrant ) (at VD=12V) | Max 1.3 V (All Quadrants) | Max 30 mA (Quadrant -), Max 45 mA (Quadrant -) (at IG=1.2IGT) | Max 25 mA (at IT=100mA) | Min 100 V/s (Gate Open, Tj=125) | Min 0.5 V/s (at (dI/dt)c=1.7A/ms, Tj=125) | 2.8 /W | 70 /W |
| BT136S-800E(MS) | 800 V | 800 V | 4 A | 35 A | 6.1 As | 50 A/s (--), 10 A/s () | 2 A | 0.5 W | 5 W | -40 to 150 | -40 to 125 | 1.6 V (at ITM=5.5A, tp=380s, Tj=25) | 5 A (at VD=VDRM, Tj=25) | 0.5 mA (at VR=VRRM, Tj=125) | Max 10 mA (Quadrant --), Max 25 mA (Quadrant ) (at VD=12V) | Max 1.3 V (All Quadrants) | Max 30 mA (Quadrant -), Max 45 mA (Quadrant -) (at IG=1.2IGT) | Max 25 mA (at IT=100mA) | Min 100 V/s (Gate Open, Tj=125) | Min 0.5 V/s (at (dI/dt)c=1.7A/ms, Tj=125) | 2.8 /W | 70 /W |
| Package | Reel Quantity | Dimensions (Millimeters) | Dimensions (Inches) |
|---|---|---|---|
| TO-252 | 2500 | A: 2.200-2.400 A1: 0.000-0.127 b: 0.635-0.770 c: 0.460-0.580 D: 6.500-6.700 D1: 5.100-5.460 D2: 5.250 REF. E: 6.000-6.200 e: 2.186-2.386 L: 9.712-10.312 L1: 1.400-1.700 L2: 0.600-1.000 L3: 2.900 REF. L4: 4.830 REF. : 1.100-1.300 : 0-8 h: 0.000-0.300 V: 1.600 REF. | A: 0.087-0.094 A1: 0.000-0.005 b: 0.025-0.030 c: 0.018-0.023 D: 0.256-0.264 D1: 0.201-0.215 D2: 0.207 REF. E: 0.236-0.244 e: 0.086-0.094 L: 0.382-0.406 L1: 0.055-0.067 L2: 0.024-0.039 L3: 0.114 REF. L4: 0.190 REF. : 0.043-0.051 : 0-8 h: 0.000-0.012 V: 0.063 REF. |
2404151058_MSKSEMI-BT136S-800E-MS_C22365385.pdf
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