N Channel Power MOSFET MIRACLE POWER MJP29N50 500V 29A Avalanche Tested for Power Supply Applications
Key Attributes
Model Number:
MJP29N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
29A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.5V@2250uA
Type:
N-Channel
Pd - Power Dissipation:
139W
Mfr. Part #:
MJP29N50
Package:
PTO-252
Product Description
Product Overview
The MJP29N50 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring Advanced Super Junction Technology for easy gate switching control. It is 100% avalanche tested and rated at 500V and 29A, with a typical RDS(on) of 113m at VGS = 10V. This MOSFET is suitable for applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and single-ended flyback or two-transistor forward topologies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Super Junction Technology
- Testing: 100% Avalanche Tested
Technical Specifications
| Parameter | Rating/Value | Unit | Test Condition |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| Drain-Source Voltage (VDS) | 500 | V | TC = 25C unless otherwise noted |
| Gate-Source Voltage (VGS) | 30 | V | TC = 25C unless otherwise noted |
| Drain Current-Continuous (ID) | 29 | A | TC = 25C |
| Drain Current-Continuous (ID) | 19 | A | TC = 100C |
| Drain Current-Pulsed (IDM) | 87 | A | b |
| Maximum Power Dissipation (PD) | 139 | W | TC = 25C |
| Peak Diode Recovery dv/dt | 50 | V/ns | |
| Single Pulsed Avalanche Energy (EAS) | 605 | mJ | c |
| Operating and Store Temperature Range (TJ, TSTG) | -55 to 150 | C | |
| Thermal Characteristics | |||
| Thermal Resistance, Junction to Case (RJC) | 0.9 | C/W | |
| Thermal Resistance, Junction to Ambient (RJA) | 62 | C/W | |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||
| Off Characteristics | |||
| Drain-Source Breakdown Voltage (BVDSS) | 500 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current (IDSS) | 1.0 | A | VDS = 500, VGS = 0V |
| Forward Gate Body Leakage Current (IGSS) | 100 | nA | VDS = 0V, VGS = 30V |
| On Characteristics | |||
| Gate Threshold Voltage (VGS(th)) | 2.5 - 3.5 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance (RDS(on)) | 113 - 130 | m | VGS = 10V, ID = 10A (Typ. 113m) |
| Dynamic Characteristics | |||
| Gate Resistance (RG) | 24.2 | f = 1.0MHz | |
| Input Capacitance (Ciss) | 1446 | pF | VDS = 100V, VGS = 0V, f = 1.0MHz |
| Output Capacitance (Coss) | 79 | pF | |
| Reverse Transfer Capacitance (Crss) | 1.31 | pF | |
| Switching Characteristics | |||
| Turn-On Delay Time (td(on)) | 20 | ns | VDD = 400V, VGS = 13V, ID = 7.7A, RG = 3.4 |
| Turn-On Rise Time (tr) | 13 | ns | |
| Turn-Off Delay Time (td(off)) | 144 | ns | |
| Turn-Off Fall Time (tf) | 25 | ns | |
| Total Gate Charge (Qg) | 32.9 | nC | VDD = 400V, VGS = 0 to 10V, ID = 7.7A |
| Gate-Source Charge (Qgs) | 6.5 | nC | |
| Gate-Drain Charge (Qgd) | 11.4 | nC | |
| Drain-Source Diode Characteristics | |||
| Drain-Source Diode Forward Voltage (VSD) | 0.7 | V | VGS = 0V, IF = 1A |
| Body Diode Reverse Recovery Time (Trr) | 205 | ns | VR = 400V, IF = 7.7A, dIF/dt = 100A/s |
| Body Diode Reverse Recovery Charge (Qrr) | 2.0 | C | VR = 400V, IF = 7.7A, dIF/dt = 100A/s |
| Peak reverse recovery current (Irrm) | 20.3 | A | VR = 400V, IF = 7.7A, dIF/dt = 100A/s |
Notes:
a. TJ = +25 to +150 .
b. Repetitive rating: pulse width limited by maximum junction temperature.
c. L = 10mH, VDD = 100V, IAS = 11A, RG = 25 Starting TJ = 25 .
d. Pulse width 300s; duty cycle 2%.
2504151445_MIRACLE-POWER-MJP29N50_C47361152.pdf
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