Industrial grade N Channel Power MOSFET MIRACLE POWER MJF28N60 with 600V drain source voltage rating
Key Attributes
Model Number:
MJF28N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
28A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@2250uA
Reverse Transfer Capacitance (Crss@Vds):
5.07pF
Output Capacitance(Coss):
218pF
Input Capacitance(Ciss):
2.389nF
Gate Charge(Qg):
47.59nC@13V
Mfr. Part #:
MJF28N60
Package:
TO-220F
Product Description
MJF28N60 N-Channel Power MOSFET
Product Overview
The MJF28N60 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed with advanced Super Junction Technology. It offers a robust 600V breakdown voltage and a continuous drain current of 28A, with a low on-resistance of 120m (typ.) at VGS = 10V. This MOSFET is easy to control for gate switching and is 100% avalanche tested, making it suitable for demanding applications in PC power supplies, server power, telecom power, adaptors, LED lighting, and UPS systems. It is also ideal for use in boost PFC switch, single-ended flyback, two-transistor forward, half bridge, asymmetric half bridge, and series resonance half bridge topologies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Super Junction Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, On-Resistance | VGS = 10V | 120 | m | |||
| VDS | Drain-Source Voltage | 600 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | 28 | A | |||
| IDM | Drain Current-Pulsed | 84 | A | |||
| PD | Maximum Power Dissipation (TC = 25C) | 34 | W | |||
| dv/dt | Peak Diode Recovery dv/dt | 15 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | 781 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 3.65 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 80 | C/W | |||
| Electrical Characteristics (TJ = 25C) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 10mA | 605 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 600, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.8 | - | 4.2 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 10A | - | 120 | 150 | m |
| RG | Gate Resistance | f = 1.0MHz | - | 5.8 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10kHz | - | 2389 | - | pF |
| Coss | Output Capacitance | - | 218 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 5.07 | - | pF | |
| td(on) | Turn-On Delay Time | VDD = 400V, VGS = 13V, ID = 11.3A, RG = 1.7 | - | 12.4 | - | ns |
| tr | Turn-On Rise Time | - | 21.6 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 50 | - | ns | |
| tf | Turn-Off Fall Time | - | 18.4 | - | ns | |
| Qg | Total Gate Charge | VDD = 400V, VGS = 0 to 10V, ID = 11.3A | - | 47.59 | - | nC |
| Qgs | Gate-Source Charge | - | 8.52 | - | - | |
| Qgd | Gate-Drain Charge | - | 8.30 | - | - | |
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.7 | - | V |
| Trr | Body Diode Reverse Recovery Time | VR = 400V, IF = 11.3A, dIF/dt = 100A/s | - | 288 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | VR = 400V, IF = 11.3A, dIF/dt = 100A/s | - | 4.3 | - | C |
| Irrm | Peak reverse recovery current | VR = 400V, IF = 11.3A, dIF/dt = 100A/s | - | 26.2 | - | A |
2504151445_MIRACLE-POWER-MJF28N60_C47361037.pdf
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