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quality PNP Transistor Nexperia PMBS3906 215 in Surface Mount SOT23 Package for General Purpose Applications factory
quality PNP Transistor Nexperia PMBS3906 215 in Surface Mount SOT23 Package for General Purpose Applications factory

PNP Transistor Nexperia PMBS3906 215 in Surface Mount SOT23 Package for General Purpose Applications

Key Attributes
Model Number: PMBS3906,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PMBS3906,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PMBS3906 is a PNP general-purpose transistor designed for versatile switching and amplification applications. Housed in a compact SOT23 (TO-236AB) surface-mounted plastic package, this transistor offers a collector current capability of 100 mA and a collector-emitter voltage of -40 V. Its NPN complement is the PMBS3904. Ideal for general-purpose use, it provides reliable performance in a small form factor.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT23 (TO-236AB)
  • Transistor Type: PNP
  • Complementary NPN Transistor: PMBS3904

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Quick Reference Data
VCEO Collector-emitter voltage Open base - - -40 V
IC Collector current - - - 100 mA
hFE DC current gain VCE = -1 V; IC = -10 mA; Tamb = 25 C 100 - 300 -
Limiting Values
VCBO Collector-base voltage Open emitter - - -40 V
VCEO Collector-emitter voltage Open base - - -40 V
VEBO Emitter-base voltage Open collector - - -5 V
IC Collector current - - - -100 mA
ICM Peak collector current - - - -200 mA
IBM Peak base current - - - -200 mA
Ptot Total power dissipation Tamb 25 C - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Thermal Characteristics
Rth(j-a) Thermal resistance from junction to ambient In free air [1] - - 500 K/W
Characteristics
ICBO Collector-base cut-off current VCB = -30 V; IE = 0 A; Tamb = 25 C - - -50 nA
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 C - - -50 nA
hFE DC current gain VCE = -1 V; IC = -0.1 mA; Tamb = 25 C 60 - - -
VCE = -1 V; IC = -1 mA; Tamb = 25 C 80 - - -
VCE = -1 V; IC = -10 mA; Tamb = 25 C 100 - 300 -
VCE = -1 V; IC = -50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 60 - - -
VCE = -1 V; IC = -100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 30 - - -
VCEsat Collector-emitter saturation voltage IC = -10 mA; IB = -1 mA; Tamb = 25 C - - -250 mV
IC = -50 mA; IB = -5 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - -400 mV
VBEsat Base-emitter saturation voltage IC = -10 mA; IB = -1 mA; Tamb = 25 C - - -850 mV
IC = -50 mA; IB = -5 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - -950 mV
td Delay time - - - 50 ns
tr Rise time - - - 50 ns
ton Turn-on time - - - 100 ns
ts Storage time - - - 600 ns
tf Fall time - - - 100 ns
toff Turn-off time IC = -10 mA; IBon = -1 mA; IBoff = 1 mA; Tamb = 25 C - - 700 ns
Cc Collector capacitance VCB = -5 V; IE = 0 A; ie = 0 A; f = 100 MHz; Tamb = 25 C - - 4.5 pF
Ce Emitter capacitance VEB = -0.5 V; IC = 0 A; ic = 0 A; f = 100 MHz; Tamb = 25 C - - 12 pF
fT Transition frequency VCE = -20 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C 150 - - MHz
NF Noise figure VCE = -5 V; IC = -100 A; RS = 1 k; 10 Hz < f < 15700 Hz; Tamb = 25 C - - 4 dB

2410121952_Nexperia-PMBS3906-215_C8669.pdf

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