650V 10A N Channel Power MOSFET MIRACLE POWER MPP10N65A with Low Crss and Avalanche Tested Reliability
Key Attributes
Model Number:
MPP10N65A
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
RDS(on):
1Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
6.6pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
1.595nF@25V
Gate Charge(Qg):
31.9nC
Mfr. Part #:
MPP10N65A
Package:
PTO-252
Product Description
Product Overview
The MPP10N65A is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 650V drain-source voltage, 10A continuous drain current, and a low on-resistance of 0.80 (typ.) at VGS = 10V. This MOSFET is characterized by low Crss and fast switching speeds, making it suitable for adapter applications, including LCD/PDP adapters and E-Bike chargers. It has undergone 100% avalanche testing for reliability.Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Model: MPP10N65A
- Technology: Miracle Technology
- Revision: 1.0
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Features | |||||
| Voltage | 650 | V | |||
| Current | 10 | A | |||
| RDS(ON) | VGS = 10V | 0.80 | |||
| Other Features | Low Crss, Fast Switching, 100% Avalanche Tested | ||||
| Applications | |||||
| Adapter, LCD/PDP Adapter, E-Bike Charger | |||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | |||||
| VDS | 650 | V | |||
| VGS | 30 | V | |||
| ID (Continuous, TC =25C) | 10 | A | |||
| ID (Continuous, TC =100C) | 6.8 | A | |||
| IDM (Pulsed) | 40 | A | |||
| PD (Maximum Power Dissipation @ TJ =25C) | 100 | W | |||
| EAS (Single Pulsed Avalanche Energy) | 845 | mJ | |||
| TJ, TSTG (Operating and Store Temperature Range) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| RJC (Thermal Resistance, Junction-Case) | Max. | 1.25 | C/W | ||
| RJA (Thermal Resistance Junction-Ambient) | Max. | 62.5 | C/W | ||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS (Zero Gate Voltage Drain Current) | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS (Forward Gate Body Leakage Current) | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | |||||
| VGS(th) (Gate Threshold Voltage) | VDS = VGS, ID =250A | 2 | - | 4 | V |
| RDS(on) (Static Drain-Source On- Resistance) | VGS = 10V, ID =5A | - | 0.80 | 1.00 | |
| Dynamic Characteristics | |||||
| Ciss (Input Capacitance) | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 1595 | - | pF |
| Coss (Output Capacitance) | - | 134 | - | pF | |
| Crss (Reverse Transfer Capacitance) | - | 6.6 | - | pF | |
| Switching Characteristics | |||||
| td(on) (Turn-On Delay Time) | VDD = 325V, ID =10A, RG = 25,VGS=10V | - | 25 | - | ns |
| tr (Turn-On Rise Time) | - | 21 | - | ns | |
| td(off) (Turn-Off Delay Time) | - | 50 | - | ns | |
| tf (Turn-Off Fall Time) | - | 23 | - | ns | |
| Qg (Total Gate Charge) | VDS = 325V, ID =10A, VGS = 10V | - | 31.9 | - | nC |
| Qgs (Gate-Source Charge) | - | 8.1 | - | nC | |
| Qgd (Gate-Drain Charge) | - | 11.9 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| IS (Drain-Source Diode Forward Continuous Current) | VGS = 0V | - | - | 10 | A |
| ISM (Maximum Pulsed Current) | VGS = 0V | - | - | 40 | A |
| VSD (Drain-Source Diode Forward Voltage) | VGS = 0V, IS = 10A | - | - | 1.4 | V |
| Trr (Body Diode Reverse Recovery Time) | di/dt=100A/us, IS=10A,VGS=0V | - | 498 | - | ns |
| Qrr (Reverse Recovery Charge) | - | 3.0 | - | uC | |
2408011701_MIRACLE-POWER-MPP10N65A_C34373711.pdf
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