NPN General Purpose Transistor Nexperia BC817W115 Featuring 45 Volt Collector Emitter Voltage Rating
Key Attributes
Model Number:
BC817W,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
290mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC817W,115
Package:
SOT-323
Product Description
Nexperia BC817W Series: 45 V, 500 mA NPN General-Purpose Transistors
Product Overview
The Nexperia BC817W series comprises NPN general-purpose transistors designed for versatile switching and amplification applications. These transistors are housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package, offering high current capability and multiple current gain selections. They are ideal for general-purpose electronic circuits requiring reliable performance in a compact form factor.
Product Attributes
- Brand: Nexperia
- Package Type: SOT323 (SC-70)
- Transistor Type: NPN
- Complementary PNP Transistor: BC807W series
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base; Tamb = 25 C | - | - | 45 | V |
| IC | Collector current | Tamb = 25 C | - | - | 500 | mA |
| ICM | Peak collector current | Single pulse; tp 1 ms; Tamb = 25 C | - | - | 1 | A |
| hFE | DC current gain | BC817W [1] VCE = 1 V; IC = 100 mA; Tamb = 25 C | 100 | - | 600 | - |
| BC817-16W [1] VCE = 1 V; IC = 100 mA; Tamb = 25 C | 100 | - | 250 | - | ||
| BC817-25W [1] VCE = 1 V; IC = 100 mA; Tamb = 25 C | 160 | - | 400 | - | ||
| BC817-40W [1] VCE = 1 V; IC = 100 mA; Tamb = 25 C | 250 | - | 600 | - | ||
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 50 mA; Tamb = 25 C [1] | - | - | 700 | mV |
| VBE | Base-emitter voltage | VCE = 1 V; IC = 500 mA; Tamb = 25 C [1] [2] | - | - | 1.2 | V |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C | 100 | - | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 3 | pF |
| VCBO | Collector-base voltage | Open emitter; Tamb = 25 C | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector; Tamb = 25 C | - | - | 5 | V |
| Ptot | Total power dissipation | Tamb 25 C [1] [3] | - | - | 200 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
[1] Pulsed; tp 300 s; 0.02
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm.
2410122031_Nexperia-BC817W-115_C75566.pdf
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