86--136 6733 2386
quality Compact SOT23 NPN Darlington Transistor Nexperia BCV47 215 Suitable for Medium Current Applications factory
quality Compact SOT23 NPN Darlington Transistor Nexperia BCV47 215 Suitable for Medium Current Applications factory

Compact SOT23 NPN Darlington Transistor Nexperia BCV47 215 Suitable for Medium Current Applications

Key Attributes
Model Number: BCV47,215
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
250mW
DC Current Gain:
10000
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BCV47,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia BCV47 is an NPN Darlington transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. Designed for medium current applications up to 500 mA and low voltages up to 60 V, it offers a high DC current gain of a minimum of 2000. Its PNP complement is the BCV26. This transistor is suitable for applications such as preamplifier input amplification.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN Darlington Transistor
  • Package Type: SOT23 (TO-236AB)
  • Complementary PNP: BCV26

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCBO Collector-base voltage Open emitter - - 80 V
VCES Collector-emitter voltage Base short-circuited to emitter - - 60 V
IC Collector current - - - 500 mA
ICM Peak collector current - - - 800 mA
hFE DC current gain VCE = 5 V; IC = 100 mA; Tamb = 25 C 10000 - - -
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 80 - - V
V(BR)CES Collector-emitter breakdown voltage IC = 2 mA; VBE = 0 V; Tamb = 25 C 60 - - V
V(BR)EBO Emitter-base breakdown voltage IC = 0 A; IE = 100 A; Tamb = 25 C 10 - - V
ICBO Collector-base cut-off current VCB = 60 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICES Collector-emitter cut-off current VCE = 60 V; VBE = 0 V; Tamb = 25 C - - 100 nA
IEBO Emitter-base cut-off current VEB = 10 V; IC = 0 A; Tamb = 25 C - - 100 nA
hFE DC current gain VCE = 5 V; IC = 1 mA; Tamb = 25 C 2000 - - -
hFE DC current gain VCE = 5 V; IC = 10 mA; Tamb = 25 C 4000 - - -
hFE DC current gain VCE = 5 V; IC = 100 mA; Tamb = 25 C 10000 - - -
hFE DC current gain VCE = 5 V; IC = 500 mA; Tamb = 25 C 2000 - - -
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 1 mA; Tamb = 25 C - - 1 V
VBEsat Base-emitter saturation voltage IC = 100 mA; IB = 0.1 mA; Tamb = 25 C - - 1.5 V
VBEon Base-emitter turn-on voltage IC = 10 mA; VCE = 5 V; Tamb = 25 C - - 1.4 V
Ptot Total power dissipation Tamb 25 C - - 250 mW
Rth(j-a) Thermal resistance from junction to ambient Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint - - 500 K/W

2410122006_Nexperia-BCV47-215_C406044.pdf

Related Products
quality NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component factory
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor factory
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
quality Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package factory
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.