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quality Nexperia PBSS5350X135 transistor designed for high current power applications and peripheral drivers factory
quality Nexperia PBSS5350X135 transistor designed for high current power applications and peripheral drivers factory

Nexperia PBSS5350X135 transistor designed for high current power applications and peripheral drivers

Key Attributes
Model Number: PBSS5350X,135
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50uA
Pd - Power Dissipation:
1.6W
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS5350X,135
Package:
SOT-89
Product Description

Product Overview

The Nexperia PBSS5350X is a 50 V, 3 A PNP low VCEsat transistor designed for power management applications. It offers high collector current capability, enhanced efficiency leading to reduced heat generation, and smaller printed-circuit board requirements. This AEC-Q101 qualified transistor is suitable for various applications including DC/DC converters, supply line switching, battery chargers, LCD backlighting, peripheral drivers, and inductive load drivers like relays, buzzers, and motors.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT89
  • Qualification: AEC-Q101
  • Complementary NPN: PBSS4350X

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - -50 V
IC Collector current - - - -3 A
ICM Peak collector current Limited by Tj(max) - - -5 A
RCEsat Collector-emitter saturation resistance IC = -2 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 90 135 m
VCBO Collector-base voltage Open emitter - - -50 V
VEBO Emitter-base voltage Collector open - - -5 V
IB Base current - - - -0.5 A
Ptot Total power dissipation Tamb 25 C - - 1.6 W
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient Various PCB configurations - - 225 K/W
Rth(j-sp) Thermal resistance junction to solder point - - - 16 K/W
V(BR)CBO Collector-base breakdown voltage IC = -100 A; IE = 0 A; Tamb = 25 C -50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = -10 mA; IB = 0 A; Tamb = 25 C -50 - - V
V(BR)EBO Emitter-base breakdown voltage Collector open; IE = -100 A; IC = 0 A; Tamb = 25 C -5 - - V
ICBO Collector-base cut-off current VCB = -50 V; IE = 0 A; Tamb = 25 C - - -100 nA
ICES Collector-emitter cut-off current VCB = -50 V; IE = 0 A; Tj = 150 C - - -50 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 C - - -100 nA
hFE DC current gain VCE = -2 V; IC = -2 A; pulsed; tp 300 s; 0.02; Tamb = 25 C 130 - - -
VCEsat Collector-emitter saturation voltage IC = -2 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - -270 mV
VBEsat Base-emitter saturation voltage IC = -2 A; IB = -100 mA; Tamb = 25 C - - -1.1 V
fT Transition frequency VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 35 pF

2410121847_Nexperia-PBSS5350X-135_C551988.pdf

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