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quality Nexperia PBSS8110T 215 Low VCEsat NPN Transistor for Power Management and Inductive Load Driving factory
quality Nexperia PBSS8110T 215 Low VCEsat NPN Transistor for Power Management and Inductive Load Driving factory

Nexperia PBSS8110T 215 Low VCEsat NPN Transistor for Power Management and Inductive Load Driving

Key Attributes
Model Number: PBSS8110T,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
480mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-
Mfr. Part #:
PBSS8110T,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PBSS8110T is an NPN low VCEsat transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It offers a low collector-emitter saturation voltage (VCEsat) and high collector current capability, making it suitable for various demanding applications. Key application segments include automotive 42 V power systems, telecom infrastructure, industrial power management, DC/DC converters, supply line switching, battery chargers, LCD backlighting, peripheral drivers, and inductive load drivers such as relays, buzzers, and motors. Its PNP complement is the PBSS9110T.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT23 (TO-236AB)
  • Technology: NPN Low VCEsat Transistor
  • Complementary Device: PBSS9110T (PNP)

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - 100 V
IC Collector current - - - 1 A
ICM Peak collector current Single pulse; tp 1 ms - - 3 A
RCEsat Collector-emitter saturation resistance IC = 1 A; IB = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 165 200 m
VCBO Collector-base voltage Open emitter - - 120 V
VEBO Emitter-base voltage Collector open - - 5 V
IB Base current - - - 300 mA
Ptot Total power dissipation Tamb 25 C [1] - - 300 mW
Ptot Total power dissipation Tamb 25 C [2] - - 480 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient In free air [1] - - 417 K/W
Rth(j-a) Thermal resistance from junction to ambient In free air [2] - - 260 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 120 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 10 mA; IB = 0 A; pulsed; tp 300 s; 0.02; Tamb = 25 C 100 - - V
V(BR)EBO Emitter-base breakdown voltage Collector open; IE = 100 A; IC = 0 A; Tamb = 25 C 5 - - V
ICBO Collector-base cut-off current VCB = 80 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICBO Collector-base cut-off current VCB = 80 V; IE = 0 A; Tj = 150 C - - 50 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
ICES Collector-emitter cut-off current VCE = 80 V; VBE = 0 V; Tamb = 25 C - - 100 nA
hFE DC current gain VCE = 10 V; IC = 1 mA; Tamb = 25 C 150 - - -
hFE DC current gain VCE = 10 V; IC = 250 mA; Tamb = 25 C 150 - 500 -
hFE DC current gain VCE = 10 V; IC = 500 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 100 - - -
hFE DC current gain VCE = 10 V; IC = 1 A; pulsed; tp 300 s; 0.02; Tamb = 25 C 80 - - -
VBEsat Base-emitter saturation voltage IC = 1 A; IB = 100 mA; Tamb = 25 C - - 1.05 V
VBEon Base-emitter turn-on voltage VCE = 10 V; IC = 1 A; Tamb = 25 C - - 0.9 V
fT Transition frequency VCE = 10 V; IC = 50 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 7.5 pF

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.


2410010230_Nexperia-PBSS8110T-215_C75550.pdf

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