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quality High Voltage Power MOSFET MIRACLE POWER MPF18N50 Featuring 18A Continuous Current and Fast Switching factory
quality High Voltage Power MOSFET MIRACLE POWER MPF18N50 Featuring 18A Continuous Current and Fast Switching factory

High Voltage Power MOSFET MIRACLE POWER MPF18N50 Featuring 18A Continuous Current and Fast Switching

Key Attributes
Model Number: MPF18N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
350mΩ@10V,9A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.96pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.618nF
Pd - Power Dissipation:
42.8W
Output Capacitance(Coss):
221pF
Gate Charge(Qg):
45.7nC@10V
Mfr. Part #:
MPF18N50
Package:
TO-220F
Product Description

Product Overview

The MPF18N50 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 500V drain-source voltage, 18A continuous drain current, and a low on-resistance of 0.27 (typ.) at VGS = 10V. This MOSFET offers fast switching speeds, low Crss, and is 100% avalanche tested, making it suitable for adapters, DC-AC power converters, and switching power supplies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: Power MOSFET
  • Channel Type: N-Channel
  • Package: TO-220F

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, RDS(ON) VGS = 10V 500V 18A 0.27
Low Crss
Fast Switching
100% Avalanche Tested
Application
Adapter
DC-AC power converter
Switching power supply
Absolute Maximum Ratings (Tc = 25C unless otherwise noted)
VDS Drain-Source Voltage 500 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous, TC =25C 18 A
ID Drain Current-Continuous, TC =100C 11 A
IDM Drain Current-Pulsed b 72 A
PD Maximum Power Dissipation @ TJ =25C 42.8 W
EAS Single Pulsed Avalanche Energy d 845 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction-Case Max. 2.92 C/W
RJA Thermal Resistance Junction-Ambient Max 62.5 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 500 - - V
IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 2 - 4 V
RDS(on) Static Drain-Source On- Resistance c VGS = 10V, ID = 9A - 0.27 0.35
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 2618 - pF
Coss Output Capacitance - 221 - pF
Crss Reverse Transfer Capacitance - 5.96 - pF
On Characteristics (Switching)
td(on) Turn-On Delay Time VDD = 250V, ID =18A, RG = 10,VGS=10V - 28 - ns
tr Turn-On Rise Time - 47 - ns
td(off) Turn-Off Delay Time - 57 - ns
tf Turn-Off Fall Time - 40 - ns
Qg Total Gate Charge VDS = 400V, ID =18A, VGS = 10V - 45.7 - nC
Qgs Gate-Source Charge - 12.6 - nC
Qgd Gate-Drain Charge - 15.7 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 18 A
ISM Maximum Pulsed Current VGS = 0V - - 72 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 18A - - 1.5 V
trr Reverse Recovery Time IS=16A,Tj = 25 dIF/dt=100A/us, VGS=0V - 450 - ns
Qrr Reverse Recovery Charge - 4765 - nC

2410122015_MIRACLE-POWER-MPF18N50_C17701968.pdf

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