Load Switching Solutions with MIRACLE POWER MSA003B MOSFET Featuring 110V 181A and Low On Resistance
Product Overview
The MSA003B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a high voltage rating of 110V and a continuous drain current of 181A at 25C, with a low on-resistance of 3.1m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is designed for applications such as load switching, PWM applications, and power management. The device is Halogen-free and RoHS-compliant.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Compliance: Halogen-free; RoHS-compliant
Technical Specifications
| Parameter | Rating | Unit | Notes |
|---|---|---|---|
| Features | 110V, 181A, RDS(on)(Typ.) = 3.1m@VGS = 10V | ||
| Excellent RDS(on) and Low Gate Charge | |||
| 100% EAS Guaranteed | |||
| Application | Load Switch, PWM Application, Power Management | ||
| Absolute Maximum Ratings | Tc = 25C unless otherwise noted | ||
| VDS (Drain-Source Voltage) | 110 | V | a |
| VGS (Gate-Source Voltage) | 20 | V | |
| ID (Drain Current-Continuous) @ TC = 25C | 181 | A | |
| ID (Drain Current-Continuous) @ TC = 100C | 128 | A | |
| IDM (Drain Current-Pulsed) | 724 | A | b |
| PD (Maximum Power Dissipation) @ TC = 25C | 284 | W | |
| EAS (Single Pulsed Avalanche Energy) | 992 | mJ | c |
| TJ, TSTG (Operating and Store Temperature Range) | -55 to 150 | C | |
| Thermal Characteristics | |||
| RJC (Thermal Resistance, Junction to Case) | 0.44 | C/W | |
| RJA (Thermal Resistance, Junction to Ambient) | 35 | C/W | |
| Electrical Characteristics | TJ = 25C unless otherwise noted | ||
| Off Characteristics | |||
| BVDSS (Drain-Source Breakdown Voltage) | 110 | V | VGS = 0V, ID = 250A |
| IDSS (Zero Gate Voltage Drain Current) | 1.0 | A | VDS = 110V, VGS = 0V |
| IGSS (Forward Gate Body Leakage Current) | 100 | nA | VDS = 0V, VGS = 20V |
| On Characteristics | |||
| VGS(th) (Gate Threshold Voltage) | 2.0 - 4.0 | V | VDS = VGS, ID = 250A (Typ. 3.0) |
| RDS(on) (Static Drain-Source On-Resistance) | 3.1 - 3.9 | m | VGS = 10V, ID = 20A (Typ. 3.1) d |
| Dynamic Characteristics | |||
| RG (Gate Resistance) | 2.1 | VDS = VGS = 0V, f = 1.0MHz (Typ.) | |
| Ciss (Input Capacitance) | 6720 | pF | VDS = 55V, VGS = 0V, f = 1.0MHz (Typ.) |
| Coss (Output Capacitance) | 946 | pF | (Typ.) |
| Crss (Reverse Transfer Capacitance) | 28 | pF | (Typ.) |
| Switching Characteristics | |||
| td(on) (Turn-On Delay Time) | 32 | ns | VDD = 55V, VGS = 10V, ID = 20A, RGEN = 6.2 (Typ.) |
| tr (Turn-On Rise Time) | 45 | ns | (Typ.) |
| td(off) (Turn-Off Delay Time) | 78 | ns | (Typ.) |
| tf (Turn-Off Fall Time) | 48 | ns | (Typ.) |
| Qg (Total Gate Charge) | 101 | nC | VDS = 55V, VGS = 0 to 10V, ID = 20A (Typ.) |
| Qgs (Gate-Source Charge) | 34 | nC | (Typ.) |
| Qgd (Gate-Drain Charge) | 24 | nC | (Typ.) |
| Drain-Source Diode Characteristics | |||
| IS (Drain-Source Diode Forward Continuous Current) | 181 | A | VG = VD = 0V, Force Current |
| ISM (Maximum Pulsed Current) | 724 | A | |
| VSD (Drain-Source Diode Forward Voltage) | 1.2 | V | VGS = 0V, IS = 20A (Typ.) |
| Trr (Body Diode Reverse Recovery Time) | 85 | ns | IF = 20A, dIF/dt = 100A/s (Typ.) |
| Qrr (Body Diode Reverse Recovery Charge) | 240 | nC | IF = 20A, dIF/dt = 100A/s (Typ.) |
Notes:
a. TJ = +25 to +150 .
b. Repetitive rating: pulse width limited by maximum junction temperature.
c. L = 0.5mH, VDD = 25V, IAS = 63A, RG = 25 Starting TJ = 25 .
d. Pulse width 300s; duty cycle 0.5%.
2504151445_MIRACLE-POWER-MSA003B_C47361210.pdf
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