Load Switching Solutions with MIRACLE POWER MSA003B MOSFET Featuring 110V 181A and Low On Resistance

Key Attributes
Model Number: MSA003B
Product Custom Attributes
Drain To Source Voltage:
110V
Current - Continuous Drain(Id):
181A
RDS(on):
3.9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Input Capacitance(Ciss):
6.72nF
Output Capacitance(Coss):
946pF
Pd - Power Dissipation:
284W
Gate Charge(Qg):
101nC@10V
Mfr. Part #:
MSA003B
Package:
TO-263
Product Description

Product Overview

The MSA003B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a high voltage rating of 110V and a continuous drain current of 181A at 25C, with a low on-resistance of 3.1m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is designed for applications such as load switching, PWM applications, and power management. The device is Halogen-free and RoHS-compliant.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Compliance: Halogen-free; RoHS-compliant

Technical Specifications

Parameter Rating Unit Notes
Features 110V, 181A, RDS(on)(Typ.) = 3.1m@VGS = 10V
Excellent RDS(on) and Low Gate Charge
100% EAS Guaranteed
Application Load Switch, PWM Application, Power Management
Absolute Maximum Ratings Tc = 25C unless otherwise noted
VDS (Drain-Source Voltage) 110 V a
VGS (Gate-Source Voltage) 20 V
ID (Drain Current-Continuous) @ TC = 25C 181 A
ID (Drain Current-Continuous) @ TC = 100C 128 A
IDM (Drain Current-Pulsed) 724 A b
PD (Maximum Power Dissipation) @ TC = 25C 284 W
EAS (Single Pulsed Avalanche Energy) 992 mJ c
TJ, TSTG (Operating and Store Temperature Range) -55 to 150 C
Thermal Characteristics
RJC (Thermal Resistance, Junction to Case) 0.44 C/W
RJA (Thermal Resistance, Junction to Ambient) 35 C/W
Electrical Characteristics TJ = 25C unless otherwise noted
Off Characteristics
BVDSS (Drain-Source Breakdown Voltage) 110 V VGS = 0V, ID = 250A
IDSS (Zero Gate Voltage Drain Current) 1.0 A VDS = 110V, VGS = 0V
IGSS (Forward Gate Body Leakage Current) 100 nA VDS = 0V, VGS = 20V
On Characteristics
VGS(th) (Gate Threshold Voltage) 2.0 - 4.0 V VDS = VGS, ID = 250A (Typ. 3.0)
RDS(on) (Static Drain-Source On-Resistance) 3.1 - 3.9 m VGS = 10V, ID = 20A (Typ. 3.1) d
Dynamic Characteristics
RG (Gate Resistance) 2.1 VDS = VGS = 0V, f = 1.0MHz (Typ.)
Ciss (Input Capacitance) 6720 pF VDS = 55V, VGS = 0V, f = 1.0MHz (Typ.)
Coss (Output Capacitance) 946 pF (Typ.)
Crss (Reverse Transfer Capacitance) 28 pF (Typ.)
Switching Characteristics
td(on) (Turn-On Delay Time) 32 ns VDD = 55V, VGS = 10V, ID = 20A, RGEN = 6.2 (Typ.)
tr (Turn-On Rise Time) 45 ns (Typ.)
td(off) (Turn-Off Delay Time) 78 ns (Typ.)
tf (Turn-Off Fall Time) 48 ns (Typ.)
Qg (Total Gate Charge) 101 nC VDS = 55V, VGS = 0 to 10V, ID = 20A (Typ.)
Qgs (Gate-Source Charge) 34 nC (Typ.)
Qgd (Gate-Drain Charge) 24 nC (Typ.)
Drain-Source Diode Characteristics
IS (Drain-Source Diode Forward Continuous Current) 181 A VG = VD = 0V, Force Current
ISM (Maximum Pulsed Current) 724 A
VSD (Drain-Source Diode Forward Voltage) 1.2 V VGS = 0V, IS = 20A (Typ.)
Trr (Body Diode Reverse Recovery Time) 85 ns IF = 20A, dIF/dt = 100A/s (Typ.)
Qrr (Body Diode Reverse Recovery Charge) 240 nC IF = 20A, dIF/dt = 100A/s (Typ.)

Notes:
a. TJ = +25 to +150 .
b. Repetitive rating: pulse width limited by maximum junction temperature.
c. L = 0.5mH, VDD = 25V, IAS = 63A, RG = 25 Starting TJ = 25 .
d. Pulse width 300s; duty cycle 0.5%.


2504151445_MIRACLE-POWER-MSA003B_C47361210.pdf

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