High Power NPN Bipolar Transistor 80 Volt 8 Amp Nexperia MJD44H11AJ DPAK Package Thermal Dissipation
Nexperia MJD44H11A: 80 V, 8 A NPN High Power Bipolar Transistor
Product Overview
The Nexperia MJD44H11A is a high-power NPN bipolar transistor designed for demanding applications. Encased in a compact DPAK (TO-252 / SOT428C) surface-mount package, this transistor offers high thermal power dissipation capabilities and excellent energy efficiency due to reduced heat generation. It is electrically similar to the MJD44H series and is AEC-Q101 qualified, making it suitable for automotive applications. Key features include a low collector-emitter saturation voltage and fast switching speeds, making it ideal for power management, load switching, linear voltage regulation, constant current backlighting, motor drives, and relay replacement.
Product Attributes
- Brand: Nexperia
- Product Type: NPN High Power Bipolar Transistor
- Package Type: DPAK (TO-252 / SOT428C)
- Qualification: AEC-Q101 Qualified
- PNP Complement: MJD45H11A
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | - | - | - | 80 | V |
| IC | Collector current | - | - | - | 8 | A |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | 16 | A |
| hFE | DC current gain | VCE = 1 V; IC = 2 A; Tamb = 25 C | 60 | - | - | - |
| Ptot | Total power dissipation | Tmb 25 C [1] | - | - | 20 | W |
| Ptot | Total power dissipation | Tamb 25 C [2] | - | - | 1.75 | W |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -55 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-mb) | Thermal resistance junction to mounting base | - | - | - | 6.25 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | [1] | - | - | 72 | K/W |
| ICES | Collector-emitter cut-off current | VCE = 64 V; VBE = 0 V; Tamb = 25 C | - | - | 1 | A |
| ICES | Collector-emitter cut-off current | VCE = 64 V; VBE = 0 V; Tj = 150 C | - | - | 50 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 1 | A |
| hFE | DC current gain | VCE = 1 V; IC = 4 A; Tamb = 25 C | 40 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 8 A; IB = 400 mA; Tamb = 25 C | - | - | 1 | V |
| VBEsat | Base-emitter saturation voltage | IC = 8 A; IB = 800 mA; Tamb = 25 C | - | - | 1.5 | V |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 30 | - | pF |
| fT | Transition frequency | VCE = 10 V; IC = 500 mA; f = 100 MHz; Tamb = 25 C | - | 160 | - | MHz |
[1] Total power dissipation junction to mounting base.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm.
2410121948_Nexperia-MJD44H11AJ_C3198528.pdf
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