General Purpose NPN Transistor Nexperia BC850CW 115 Designed for Tape Recorders and Hi Fi Amplifiers
Key Attributes
Model Number:
BC850CW,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC850CW,115
Package:
SOT-323
Product Description
Product Overview
The BC849W and BC850W are NPN general purpose transistors designed for low current (max. 100 mA) and low voltage (max. 45 V) applications. They are particularly suitable for low noise stages in tape recorders, hi-fi amplifiers, and other audio-frequency equipment. These transistors are housed in a SOT323 plastic package. PNP complements include the BC859W and BC860W.
Product Attributes
- Brand: Nexperia (formerly NXP Semiconductors)
- Package Type: SOT323
- Transistor Type: NPN General Purpose
- PNP Complements: BC859W, BC860W
Technical Specifications
| Model | Marking Code | Collector-Base Voltage (VCBO) (V) | Collector-Emitter Voltage (VCEO) (V) | Emitter-Base Voltage (VEBO) (V) | Collector Current (IC) (mA) | Peak Collector Current (ICM) (mA) | Peak Base Current (IBM) (mA) | Total Power Dissipation (Ptot) (mW) | Storage Temperature (Tstg) (C) | Junction Temperature (Tj) (C) | Operating Ambient Temperature (Tamb) (C) | Thermal Resistance (Rth j-a) (K/W) | Collector Cut-off Current (ICBO) (nA) | Emitter Cut-off Current (IEBO) (nA) | DC Current Gain (hFE) | Collector-Emitter Saturation Voltage (VCEsat) (mV) | Base-Emitter Voltage (VBE) (mV) | Collector Capacitance (Cc) (pF) | Emitter Capacitance (Ce) (pF) | Transition Frequency (fT) (MHz) | Noise Figure (F) (dB) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BC849W | - | -30 | -30 | -5 | -100 | -200 | -200 | -200 (Tamb 25 C, note 1) | -65 to +150 | -150 | -65 to +150 | 625 (note 1) | -15 (IE=0; VCB=30V) -5 (IE=0; VCB=30V; Tj=150C) | -100 (IC=0; VEB=5V) | - | - | - | - | - | - | - |
| BC850W | - | -50 | -45 | -5 | -100 | -200 | -200 | -200 (Tamb 25 C, note 1) | -65 to +150 | -150 | -65 to +150 | 625 (note 1) | -15 (IE=0; VCB=30V) -5 (IE=0; VCB=30V; Tj=150C) | -100 (IC=0; VEB=5V) | - | - | - | - | - | - | - |
| BC849BW | 2B* | -30 | -30 | -5 | -100 | -200 | -200 | -200 (Tamb 25 C, note 1) | -65 to +150 | -150 | -65 to +150 | 625 (note 1) | -15 (IE=0; VCB=30V) -5 (IE=0; VCB=30V; Tj=150C) | -100 (IC=0; VEB=5V) | 200 - 450 (IC=2mA; VCE=5V) | -250 (IC=10mA; IB=0.5mA) -600 (IC=100mA; IB=5mA; note 1) | 580 - 700 (IC=2mA; VCE=5V) -770 (IC=10mA; VCE=5V) | -3 (VCB=10V; f=1MHz) | -11 (VEB=500mV; f=1MHz) | 100 (IC=10mA; VCE=5V; f=100MHz) | -4 (IC=200A; VCE=5V; RS=2k; f=10Hz to 15.7kHz) -4 (IC=200A; VCE=5V; RS=2k; f=1kHz; B=200Hz) |
| BC849CW | 2C* | -30 | -30 | -5 | -100 | -200 | -200 | -200 (Tamb 25 C, note 1) | -65 to +150 | -150 | -65 to +150 | 625 (note 1) | -15 (IE=0; VCB=30V) -5 (IE=0; VCB=30V; Tj=150C) | -100 (IC=0; VEB=5V) | 420 - 800 (IC=2mA; VCE=5V) | -250 (IC=10mA; IB=0.5mA) -600 (IC=100mA; IB=5mA; note 1) | 580 - 700 (IC=2mA; VCE=5V) -770 (IC=10mA; VCE=5V) | -3 (VCB=10V; f=1MHz) | -11 (VEB=500mV; f=1MHz) | 100 (IC=10mA; VCE=5V; f=100MHz) | -4 (IC=200A; VCE=5V; RS=2k; f=10Hz to 15.7kHz) -4 (IC=200A; VCE=5V; RS=2k; f=1kHz; B=200Hz) |
| BC850BW | 2F* | -50 | -45 | -5 | -100 | -200 | -200 | -200 (Tamb 25 C, note 1) | -65 to +150 | -150 | -65 to +150 | 625 (note 1) | -15 (IE=0; VCB=30V) -5 (IE=0; VCB=30V; Tj=150C) | -100 (IC=0; VEB=5V) | 200 - 450 (IC=2mA; VCE=5V) | -250 (IC=10mA; IB=0.5mA) -600 (IC=100mA; IB=5mA; note 1) | 580 - 700 (IC=2mA; VCE=5V) -770 (IC=10mA; VCE=5V) | -3 (VCB=10V; f=1MHz) | -11 (VEB=500mV; f=1MHz) | 100 (IC=10mA; VCE=5V; f=100MHz) | -4 (IC=200A; VCE=5V; RS=2k; f=10Hz to 15.7kHz) -4 (IC=200A; VCE=5V; RS=2k; f=1kHz; B=200Hz) |
| BC850CW | 2G* | -50 | -45 | -5 | -100 | -200 | -200 | -200 (Tamb 25 C, note 1) | -65 to +150 | -150 | -65 to +150 | 625 (note 1) | -15 (IE=0; VCB=30V) -5 (IE=0; VCB=30V; Tj=150C) | -100 (IC=0; VEB=5V) | 420 - 800 (IC=2mA; VCE=5V) | -250 (IC=10mA; IB=0.5mA) -600 (IC=100mA; IB=5mA; note 1) | 580 - 700 (IC=2mA; VCE=5V) -770 (IC=10mA; VCE=5V) | -3 (VCB=10V; f=1MHz) | -11 (VEB=500mV; f=1MHz) | 100 (IC=10mA; VCE=5V; f=100MHz) | -4 (IC=200A; VCE=5V; RS=2k; f=10Hz to 15.7kHz) -4 (IC=200A; VCE=5V; RS=2k; f=1kHz; B=200Hz) |
Note 1: Transistor mounted on an FR4 printed-circuit board.
Note: * = - : Made in Hong Kong. * = t : Made in Malaysia.
Dimensions (mm):
| A1 | bp | c | D | E | e1 | HE | Lp | Q | w | v |
|---|---|---|---|---|---|---|---|---|---|---|
| 0.1 | 1.1 | 0.8 | 0.4 | 0.3 | 0.25 | 0.10 | 2.2 | 1.8 | 1.35 | 1.15 |
| 0.65 | 1.3 | 2.2 | 2.0 | 0.23 | 0.13 | 0.2 | 0.2 | 0.45 | 0.15 | - |
Pin Description:
- 1: base
- 2: emitter
- 3: collector
2410121940_Nexperia-BC850CW-115_C135825.pdf
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