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quality N Channel Enhancement Mode MOSFET MIRACLE POWER MS8001C with High Avalanche Ruggedness and Low RDS factory
quality N Channel Enhancement Mode MOSFET MIRACLE POWER MS8001C with High Avalanche Ruggedness and Low RDS factory

N Channel Enhancement Mode MOSFET MIRACLE POWER MS8001C with High Avalanche Ruggedness and Low RDS

Key Attributes
Model Number: MS8001C
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
120A
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Output Capacitance(Coss):
637pF
Pd - Power Dissipation:
173.6W
Input Capacitance(Ciss):
4.021nF
Gate Charge(Qg):
80nC
Mfr. Part #:
MS8001C
Package:
TO-220
Product Description

Product Overview

The MS8001C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This MOSFET offers high performance with an 85V drain-source voltage, 120A continuous drain current, and a low on-resistance of 4.6m (typ.) at VGS = 10V. Key features include fast switching, high avalanche ruggedness, excellent RDS(ON), low gate charge, and low reverse transfer capacitances. It is ideally suited for applications such as motor drivers, general switching applications, and current switching in DC/DC & AC/DC (SR) subsystems.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Technology: Miracle Technology
  • Model: MS8001C

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, RDS(ON) 85V, 120A 4.6m (at VGS = 10V)
Switching Fast Switching
Ruggedness High Avalanche Ruggedness
Performance Excellent RDS(ON), Low Gate Charge
Capacitances Low Reverse Transfer Capacitances
Application
Motor Drivers, Switching Applications, Current Switching in DC/DC&AC/DC(SR) Sub systems
Absolute Maximum Ratings (Tc = 25C unless otherwise noted)
VDS Drain-Source Voltage 85 V
VGS Gate-Source Voltage 20 20 V
ID Drain Current-Continuous (TC = 25C) 120 A
ID Drain Current-Continuous (TC = 100C) 87.4 A
IDM Drain Current-Pulsed (b) 480 A
PD Maximum Power Dissipation (@ TJ = 25C) 173.6 W
EAS Single Pulsed Avalanche Energy (c) 420 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.72 C/W
RJA Thermal Resistance, Junction to Ambient 62.5 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 85 - - V
IDSS Zero Gate Voltage Drain Current VDS = 85V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.0 - 4.0 V
RDS(on) Static Drain-Source On-Resistance (d) VGS = 10V, ID = 20A - 4.6 5.5 m
Dynamic Characteristics
Ciss Input Capacitance VDS = 40V, VGS = 0V, f = 1MHz - 4021 - pF
Coss Output Capacitance - 637 - pF
Crss Reverse Transfer Capacitance - 17 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 40V, VGS = 10V, ID = 50A, RG = 3 - 22 - ns
tr Turn-On Rise Time - 42 - ns
td(off) Turn-Off Delay Time - 48 - ns
tf Turn-Off Fall Time - 25 - ns
Qg Total Gate Charge VDD = 40V, VGS = 10V, ID = 50A - 80 - nC
Qgs Gate-Source Charge - 23 - nC
Qgd Gate-Drain Charge - 24 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG=VD=0V, Force Current - - 120 A
ISM Maximum Pulsed Current - - 480 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 50A - - 1.2 V
Trr Body Diode Reverse Recovery Time IS = 20A, di/dt = 100A/s - 60 - ns
Qrr Body Diode Reverse Recovery Charge IS = 20A, di/dt = 100A/s - 136 - nC

Notes:
a. TJ = +25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. L = 0.5mH, VDD = 50V, IAS = 41A, RG = 25 Starting TJ = 25 .
d. Pulse width 300s; duty cycle 2%.


2504151445_MIRACLE-POWER-MS8001C_C47361102.pdf

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