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quality N Channel Power MOSFET MIRACLE POWER MJQ29N50 featuring 500V 29A and low RDS ON for power conversion factory
quality N Channel Power MOSFET MIRACLE POWER MJQ29N50 featuring 500V 29A and low RDS ON for power conversion factory

N Channel Power MOSFET MIRACLE POWER MJQ29N50 featuring 500V 29A and low RDS ON for power conversion

Key Attributes
Model Number: MJQ29N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
29A
RDS(on):
130mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.31pF
Output Capacitance(Coss):
79pF
Input Capacitance(Ciss):
1.446nF
Pd - Power Dissipation:
156W
Gate Charge(Qg):
32.9nC@10V
Mfr. Part #:
MJQ29N50
Package:
TO-247
Product Description

Product Overview

The MJQ29N50 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring Advanced Super Junction Technology for easy-to-control gate switching. This 500V, 29A MOSFET boasts a low on-resistance of 113m (typ.) at VGS = 10V and is 100% avalanche tested. It is ideally suited for applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and single-ended flyback or two-transistor forward topologies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: N-Channel Power MOSFET
  • Model: MJQ29N50
  • Technology: Advanced Super Junction Technology
  • Testing: 100% Avalanche Tested

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, RDS(ON) VGS = 10V 500V 29A 113m
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C unless otherwise noted - - 500 V
VGS Gate-Source Voltage - - 30 V
ID Drain Current-Continuous, TC = 25C - - 29 A
IDM Drain Current-Pulsed b - - 87 A
PD Maximum Power Dissipation @ TJ = 25C - - 156 W
dv/dt Peak Diode Recovery dv/dt c - - 50 V/ns
EAS Single Pulsed Avalanche Energy d - - 500 mJ
TJ, TSTG Operating and Store Temperature Range -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - 0.8 - C/W
RJA Thermal Resistance, Junction to Ambient - 62 - C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 500 - - V
IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.5 - 3.5 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 14.5A - 113 130 m
Dynamic Characteristics
RG Gate Resistance f = 1.0MHz - 24.2 -
Ciss Input Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz - 1446 - pF
Coss Output Capacitance - 79 - pF
Crss Reverse Transfer Capacitance - 1.31 - pF
On Characteristics
td(on) Turn-On Delay Time VDD = 400V, VGS = 13V, ID = 7.7A, RG = 3.4 - 20 - ns
tr Turn-On Rise Time - 13 - ns
td(off) Turn-Off Delay Time - 144 - ns
tf Turn-Off Fall Time - 25 - ns
Qg Total Gate Charge VDD = 400V, VGS = 0 to 10V, ID = 7.7A - 32.9 - nC
Qgs Gate-Source Charge - 6.5 - nC
Qgd Gate-Drain Charge - 11.4 - nC
Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward Voltage VGS = 0V, IF = 1A - 0.7 - V
Trr Body Diode Reverse Recovery Time VR = 400V, IF = 7.7A dIF/dt = 100A/s - 205 - ns
Qrr Body Diode Reverse Recovery Charge VR = 400V, IF = 7.7A dIF/dt = 100A/s - 2.0 - C
Irrm Peak reverse recovery current VR = 400V, IF = 7.7A dIF/dt = 100A/s - 20.3 - A

Notes:
a. TJ = +25 to +150 .
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. Pulse width 300s; duty cycle 2%.
d. L = 10mH, VDD = 100V, IAS = 10A, RG = 25 Starting TJ = 25 .


2504151445_MIRACLE-POWER-MJQ29N50_C47361034.pdf

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