Nexperia PBRN113ET215 low VCEsat resistor equipped transistor for switching in automotive applications
Key Attributes
Model Number:
PBRN113ET,215
Product Custom Attributes
Input Resistor:
1kΩ
Resistor Ratio:
1.1
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
PBRN113ET,215
Package:
SOT-23
Product Description
Product Overview
The Nexperia PBRN113ET is an NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It features a 600 mA output current capability, low collector-emitter saturation voltage, and high current gain. The integrated bias resistors reduce component count, simplify circuit design, and lower pick-and-place costs. This device is suitable for switching loads and as a medium current peripheral driver.
Product Attributes
- Brand: Nexperia
- Type: NPN PB RET (Resistor-Equipped Transistor)
- Package: SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 40 | V |
| IO | Output current | Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint. | - | - | 600 | mA |
| R1 | Bias resistor 1 | See section "Test information" for resistor calculation and test conditions | 0.7 | 1 | 1.3 | k |
| R2/R1 | Bias resistor ratio | See section "Test information" for resistor calculation and test conditions | 0.9 | 1 | 1.1 | - |
| VCBO | Collector-base voltage | Open emitter | - | - | 40 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 10 | V |
| VI | Input voltage | - | -10 | - | 10 | V |
| IO | Output current | - | - | - | 600 | mA |
| IORM | Repetitive peak output current | tp 1 ms; 0.33 | - | - | 700 | mA |
| Ptot | Total power dissipation | Tamb 25 C (Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint) | - | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C (Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated, mounting pad for collector 1 cm2) | - | - | 370 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | In free air; Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint. | - | 500 | - | K/W |
| Rth(j-sp) | Thermal resistance from junction to solder point | Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated, mounting pad for collector 1 cm2. | - | 338 | - | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 40 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 10 mA; IB = 0 A; Tamb = 25 C | 40 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 C | - | - | 0.5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 4 | mA |
| hFE | DC current gain | VCE = 5 V; IC = 50 mA; Tamb = 25 C | 40 | 75 | - | V |
| hFE | DC current gain | VCE = 5 V; IC = 300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 180 | 300 | - | V |
| hFE | DC current gain | VCE = 5 V; IC = 600 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 250 | 400 | - | V |
| hFE | DC current gain | VCE = 5 V; IC = 800 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 270 | 420 | - | V |
| VCEsat | Collector-emitter saturation voltage | IC = 50 mA; IB = 2.5 mA; Tamb = 25 C | - | 25 | 35 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 200 mA; IB = 10 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 60 | 85 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 10 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 160 | 220 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 600 mA; IB = 6 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 320 | 550 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 800 mA; IB = 8 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 680 | 1150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | 0.6 | 1 | 1.5 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 20 mA; Tamb = 25 C | 1 | 1.3 | 1.8 | V |
| R1 | Bias resistor 1 | See section "Test information" for resistor calculation and test conditions | 0.7 | 1 | 1.3 | k |
| R2/R1 | Bias resistor ratio | See section "Test information" for resistor calculation and test conditions | 0.9 | 1 | 1.1 | - |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 7 | - | pF |
2411121132_Nexperia-PBRN113ET-215_C551811.pdf
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