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quality NPN switching transistor with 200 milliamp collector current Nexperia PMST3904 115 in SOT323 package factory
quality NPN switching transistor with 200 milliamp collector current Nexperia PMST3904 115 in SOT323 package factory

NPN switching transistor with 200 milliamp collector current Nexperia PMST3904 115 in SOT323 package

Key Attributes
Model Number: PMST3904,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PMST3904,115
Package:
SOT-323
Product Description

Product Overview

The Nexperia PMST3904 is an NPN switching transistor designed for general amplification and switching applications. This AEC-Q101 qualified component is housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package, offering a collector current capability of up to 200 mA and a collector-emitter voltage of 40 V. Its PNP complement is the PMST3906.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN Switching Transistor
  • Package Type: SOT323 (SC-70)
  • Qualification: AEC-Q101 Qualified
  • Complementary Device: PMST3906

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 40 V
IC Collector current - - - 200 mA
hFE DC current gain VCE = 1 V; IC = 10 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 100 - 300 -
VCBO Collector-base voltage open emitter - - 60 V
VEBO Emitter-base voltage open collector - - 6 V
ICM Peak collector current - - - 200 mA
IBM Peak base current - - - 100 mA
Ptot Total power dissipation Tamb 25 C [1] - - 200 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - - 625 K/W
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tamb = 25 C - - 50 nA
IEBO Emitter-base cut-off current VEB = 6 V; IC = 0 A; Tamb = 25 C - - 50 nA
hFE DC current gain VCE = 1 V; IC = 0.1 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 60 - - -
hFE DC current gain VCE = 1 V; IC = 1 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 80 - - -
hFE DC current gain VCE = 1 V; IC = 10 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 100 - 300 -
hFE DC current gain VCE = 1 V; IC = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 60 - - -
hFE DC current gain VCE = 1 V; IC = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 1 mA; Tamb = 25 C - - 200 mV
VCEsat Collector-emitter saturation voltage IC = 50 mA; IB = 5 mA; Tamb = 25 C - - 300 mV
VBEsat Base-emitter saturation voltage IC = 10 mA; IB = 1 mA; Tamb = 25 C 650 - 850 mV
VBEsat Base-emitter saturation voltage IC = 50 mA; IB = 5 mA; Tamb = 25 C - - 950 mV
Cc Collector capacitance VCB = 5 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 4 pF
Ce Emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C - - 8 pF
fT Transition frequency VCE = 10 V; IC = 20 mA; f = 100 MHz; Tamb = 25 C 300 - - MHz
NF Noise figure VCE = 5 V; IC = 100 A; RS = 1 k; f = 10 Hz to 15.7 kHz; Tamb = 25 C - - 5 dB
td Delay time Switching times (between 10% and 90% levels) - - 35 ns
tr Rise time Switching times (between 10% and 90% levels) - - 35 ns
ts Storage time Switching times (between 10% and 90% levels) - - 200 ns
tf Fall time IC = 10 mA; IBon = 1 mA; IBoff = -1 mA; Tamb = 25 C - - 50 ns

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.


2410122031_Nexperia-PMST3904-115_C183270.pdf

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