Compact PDFN5x6 N-Channel MOSFET NH NSS060N04P5 for Battery Management Systems and DC DC Converter Circuits
Key Attributes
Model Number:
NSS060N04P5
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
60A
RDS(on):
8.04mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 N-channel
Output Capacitance(Coss):
365pF
Input Capacitance(Ciss):
930pF
Pd - Power Dissipation:
74W
Gate Charge(Qg):
22nC@20V
Mfr. Part #:
NSS060N04P5
Package:
PDFN5x6-8
Product Description
Product Overview
The NSS060N04P5 is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency, low gate charge for high-speed switching, and high EAS for reliability. This MOSFET is 100% UIS and RG tested and is suitable for a wide range of applications including DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board control, automotive electronics, and UPS. Its compact PDFN5*6 package weighs approximately 0.087 grams.
Product Attributes
- Brand: Niuhang (NH)
- Model: NSS060N04P5
- Product Line Code: FF
- Package: PDFN5*6
- Certifications: RoHS COMPLIANT
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit | |||
|---|---|---|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | |||||||||
| Drain-Source Voltage | VDS Min.@Tj | VDS | 40 | V | |||||
| Continuous Drain Current | ID Min.@Ta | ID | 60 | A | |||||
| Drain-Source On Resistance | RDS(ON) Type@10V | RDS(ON) | 4.40 | 6.00 | m | ||||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | |||||||||
| Drain-Source Voltage | VDS | 40 | V | ||||||
| Gate-Source Voltage | VGS | 20 | V | ||||||
| Continuous Drain Current | Ta= 25 | ID | 60 | A | |||||
| Continuous Drain Current | Ta= 100 | ID | 38 | A | |||||
| Drain Current-Pulsed | TJ< 150 | IDM | 240 | A | |||||
| Maximum Power Dissipation | Ta= 25 | PD | 74 | W | |||||
| Maximum Power Dissipation | Ta= 100 | PD | 29 | W | |||||
| Power Dissipation Derating Factor | Above 25 | DF | 0.59 | W/ | |||||
| Junction Temperature | TJ | -55 | 150 | ||||||
| Storage Temperature Range | TSTD | -55 | 150 | ||||||
| Avalanche Current,Single Pulse | L= 0.5 mH | IAS | 16 | A | |||||
| Single Pulse Avalanche Energy | L= 0.5 mH,VDD= 20 V | EAS | 64 | mJ | |||||
| Single Pulse Avalanche Energy | IAS= 16 A,RG= 10 Starting Tj=25 ,VG = 10 V | EAS | 64 | mJ | |||||
| Thermal Characteristcs (Ta=25 Unless Otherwise Specified) | |||||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 50.0 | /W | |||||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 1.7 | /W | |||||
| Electrical Characteristcs (Ta=25 Unless Otherwise Specified) | |||||||||
| Static off Characteristics | |||||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 40 | -- | -- | V | |||
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | 0.046 | V/ | |||||
| Drain-Source Leakage Current | VDS= 40 V,VGS=0V | I DSS | -- | 1 | uA | ||||
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | I GSS | -- | 100 | nA | ||||
| Forward Transconductance | ID= 20 A,VDS= 5 V | gfs | 12 | -- | S | ||||
| Static on Characteristics | |||||||||
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 1.0 | 1.6 | 2.2 | V | |||
| Drain-Source On Resistance | ID= 20 A,VGS= 10 V | R DS(ON) | 4.40 | 6.00 | m | ||||
| Drain-Source On Resistance | ID= 20 A,VGS= 4.5 V | R DS(ON) | 5.06 | 8.04 | m | ||||
| Dynamic Characteristics | |||||||||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | 2.30 | -- | |||||
| Input Capacitance | VDS= 20 V | C iss | 930.0 | -- | pF | ||||
| Output Capacitance | VGS= 0 V | C oss | 365.0 | -- | pF | ||||
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | 60.0 | -- | pF | ||||
| Switching Paramters (Test Circuit & Waveform See Fig.14) | |||||||||
| Turn-On Delay Time | VDS= 20 V | t d(on) | 9.0 | -- | ns | ||||
| Turn-On Rise Time | VGS= 10 V | t r | 6.0 | -- | ns | ||||
| Turn-Off Delay Time | RL= 1.2 | t d(off) | 27.0 | -- | ns | ||||
| Turn-Off Rise Time | RG= 10 | t f | 41.0 | -- | ns | ||||
| Gate Charge Paramters (Test Circuit & Waveform See Fig.15) | |||||||||
| Total Gate Charge | VDS= 20 V | Q g | 22.0 | -- | nC | ||||
| Gate-Source Charge | VGS= 10 V | Q gs | 3.3 | -- | nC | ||||
| Gate-Drain Charge | ID= 20 A | Q gd | 6.0 | -- | nC | ||||
| Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17) | |||||||||
| Max. Diode Forward Cuurent | I S | -- | 60 | A | |||||
| Max. Pulsed Forward Cuurent | I SM | -- | 210 | A | |||||
| Diode Forward Voltage | ID= 20 A,VGS=0V | V SD | 0.80 | 1.1 | V | ||||
| Reverse Recovery Time | ID= 20 A,di/dt= 100 A/us | t rr | 30 | -- | ns | ||||
| Reverse Recovery Charge | VGS= 10 V,VDS= 20 V | Q rr | 15.0 | -- | uC | ||||
| OUTLINE DIMENSIONS (PDFN5*6) | |||||||||
| Dim. | Min. | Typ. | Max. | Min. | Typ. | Max. | Unit | ||
| A | 4.700 | 5.700 | 0.185 | - | 0.224 | ||||
| B | 4.100 | 5.100 | 0.161 | - | 0.201 | ||||
| C | 5.600 | 6.600 | 0.220 | - | 0.260 | ||||
| D | 0.700 | 1.200 | 0.028 | - | 0.047 | ||||
| E | 0.150 | 0.450 | 0.006 | - | 0.018 | ||||
| F | 1.300 | 1.900 | 0.051 | - | 0.075 | ||||
| M | 3.100 | 3.900 | 0.122 | - | 0.154 | ||||
| N | 1.000 | 1.600 | 0.039 | - | 0.063 | ||||
| P | 0.250 | 0.750 | 0.010 | - | 0.030 | ||||
| PACKING INFORMATION | |||||||||
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) | ||||
| PDFN5*6 | Tape Reel | 37036047 | 10000 | 380295375 | 60000 | ||||
2411011351_NH-NSS060N04P5_C41784112.pdf
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