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quality Low Collector Emitter Saturation Voltage PNP Transistor Nexperia PBSS5320T215 3 Amp 20 Volt Device factory
quality Low Collector Emitter Saturation Voltage PNP Transistor Nexperia PBSS5320T215 3 Amp 20 Volt Device factory

Low Collector Emitter Saturation Voltage PNP Transistor Nexperia PBSS5320T215 3 Amp 20 Volt Device

Key Attributes
Model Number: PBSS5320T,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
540mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS5320T,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PBSS5320T is a 20 V, 3 A PNP low VCEsat transistor housed in a compact SOT23 (TO-236AB) surface-mounted plastic package. It offers a low collector-emitter saturation voltage (VCEsat) and corresponding low RCEsat, high collector current capability, and high collector current gain. These features contribute to improved efficiency through reduced heat generation. The PBSS5320T is suitable for power management applications, low and medium power DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO). Its NPN complement is the PBSS4320T.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT23 (TO-236AB)
  • Material: Plastic
  • Complementary NPN Transistor: PBSS4320T

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - -20 V
IC Collector current - - - -2 A
ICRM Repetitive peak collector current 0.25; Operated under pulsed conditions; tp 100 ms - - -3 A
RCEsat Collector-emitter saturation resistance IC = -2 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 75 105 m
VCBO Collector-base voltage Open emitter - - -20 V
VEBO Emitter-base voltage Open collector - - -5 V
ICM Peak collector current Single pulse; tp 1 ms - - -5 A
IB Base current - - - -0.5 A
Ptot Total power dissipation Tamb 25 C [1] - - 300 mW
Ptot Total power dissipation Tamb 25 C [2] - - 480 mW
Ptot Total power dissipation Tamb 25 C [3] - - 540 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient In free air [1] - - 417 K/W
Rth(j-a) Thermal resistance from junction to ambient Mounting pad for collector 1 cm [2] - - 260 K/W
Rth(j-a) Thermal resistance from junction to ambient Mounting pad for collector 6 cm [3] - - 230 K/W
ICBO Collector-base cut-off current VCB = -20 V; IE = 0 A; Tamb = 25 C - - -100 nA
ICBO Collector-base cut-off current VCB = -20 V; IE = 0 A; Tj = 150 C - - -50 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 C - - -100 nA
hFE DC current gain VCE = -2 V; IC = -100 mA; Tamb = 25 C 220 - - -
hFE DC current gain VCE = -2 V; IC = -500 mA; Tamb = 25 C 220 - - -
hFE DC current gain VCE = -2 V; IC = -1 A; pulsed; tp 300 s; 0.02; Tamb = 25 C 200 - - -
hFE DC current gain VCE = -2 V; IC = -2 A; pulsed; tp 300 s; 0.02; Tamb = 25 C 150 - - -
hFE DC current gain VCE = -2 V; IC = -3 A; pulsed; tp 300 s; 0.02; Tamb = 25 C 100 - - -
VCEsat Collector-emitter saturation voltage IC = -500 mA; IB = -50 mA; Tamb = 25 C - - -70 mV
VCEsat Collector-emitter saturation voltage IC = -1 A; IB = -50 mA; Tamb = 25 C - - -130 mV
VCEsat Collector-emitter saturation voltage IC = -2 A; IB = -100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - -230 mV
VCEsat Collector-emitter saturation voltage IC = -2 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - -210 mV
VCEsat Collector-emitter saturation voltage IC = -3 A; IB = -300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - -300 mV
RCEsat Collector-emitter saturation resistance IC = -2 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 75 105 m
VBEsat Base-emitter saturation voltage IC = -2 A; IB = -100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - -1.1 V
VBEsat Base-emitter saturation voltage IC = -3 A; IB = -300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - -1.2 V
VBEon Base-emitter turn-on voltage VCE = -2 V; IC = -1 A; pulsed; tp 300 s; 0.02; Tamb = 25 C -1.2 - - V
fT Transition frequency VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 50 pF

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm.

[4] Operated under pulsed conditions: pulse width tp 100 ms; duty cycle 0.25.


2409300937_Nexperia-PBSS5320T-215_C193653.pdf

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