Power MOSFET NH NJH65R600S N Channel Super Junction Device for High Speed Switching Circuits
Key Attributes
Model Number:
NJH65R600S
Product Custom Attributes
Drain To Source Voltage:
700V
Configuration:
-
Current - Continuous Drain(Id):
8A
RDS(on):
600mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.4pF
Number:
1 N-channel
Output Capacitance(Coss):
24.3pF
Input Capacitance(Ciss):
470pF@25V
Pd - Power Dissipation:
105W
Gate Charge(Qg):
12.6nC@10V
Mfr. Part #:
NJH65R600S
Package:
TO-252
Product Description
Product Overview
The NJH65R600S is an N-Channel Enhancement Super Junction MOSFET designed for high-efficiency and high-speed switching applications. It features low RDS(ON) for improved efficiency and low gate charge for faster switching. Its high EAS rating ensures reliability, making it suitable for AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power supplies. This MOSFET is 100% UIS and RG tested.
Product Attributes
- Brand: Niuhang (NH)
- Origin: Guangdong, China
- Product Line Code: FF
- Certifications: RoHS Compliant, Pb-Free
- Package Type: TO-252
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | Min.@Tj | VDS | 700 | -- | -- | V |
| Continuous Drain Current | Min.@Ta | ID | 8 | -- | -- | A |
| RDS(ON) | Type@10V | RDS(ON) | -- | 500.00 | 600.00 | m |
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | -- | VDS | -- | -- | 700 | V |
| Gate-Source Voltage | -- | VGS | -- | -- | 30 | V |
| Continuous Drain Current (Note 1) | Ta= 25 | ID | -- | -- | 8 | A |
| Continuous Drain Current (Note 1) | Ta= 100 | ID | -- | -- | 5 | A |
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | -- | -- | 32 | A |
| Maximum Power Dissipation | Ta= 25 | PD | -- | -- | 105 | W |
| Power Dissipation Derating Factor | Above 25 Ta= 100 | DF | -- | 0.84 | -- | W/ |
| Junction Temperature | -- | TJ | -55 | -- | 150 | |
| Storage Temperature Range | -- | TSTD | -55 | -- | 150 | |
| Avalanche Current,Single Pulse (Note 1) | L= 0.5 mH | IAS | -- | -- | 18.5 | A |
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 350 V | EAS | -- | -- | 85 | mJ |
| Thermal Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | -- | 133.0 | -- | /W |
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | -- | 1.2 | -- | /W |
| Electrical Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 700 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.831 | -- | V/ |
| Drain-Source Leakage Current | VDS= 700 V,VGS=0V | I DSS | -- | -- | 1.0 | uA |
| Gate-Body Leakage Current | VGS= 30 V,VDS=0V | I GSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 4 A,VDS= 15 V | gfs | -- | 6 | -- | S |
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 4 A,VGS= 10 V | R DS(ON) | -- | 500.00 | 600.00 | m |
| Drain-Source On Resistance | ID= 4 A,VGS= 4.5 V | R DS(ON) | -- | 575.00 | 804.00 | m |
| Dynamic Characteristics | ||||||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 20.00 | -- | |
| Input Capacitance | VDS= 25 V | C iss | -- | 470.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 24.3 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 1.4 | -- | pF |
| Switching Paramters (Test Circuit & Waveform See Fig.14) | ||||||
| Turn-On Delay Time | VDS= 350 V | t d(on) | -- | 22.1 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 23.6 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 94.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | t f | -- | 46.2 | -- | ns |
| Gate Charge Paramters (Test Circuit & Waveform See Fig.15) | ||||||
| Total Gate Charge | VDS= 350 V | Q g | -- | 12.6 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 2.5 | -- | nC |
| Gate-Drain Charge | ID= 4 A | Q gd | -- | 5.3 | -- | nC |
| Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17) | ||||||
| Max. Diode Forward Current | -- | I S | -- | -- | 8 | A |
| Max. Pulsed Forward Current | -- | I SM | -- | -- | 28 | A |
| Diode Forward Voltage | ID= 4 A,VGS=0V | V SD | -- | 0.58 | 0.8 | V |
| Reverse Recovery Time | ID= 4 A,di/dt= 100 A/us | t rr | -- | 190 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 350 V | Q rr | -- | 1.5 | -- | uC |
| Model ID | -- | NJH65R600S | -- | -- | -- | -- |
| Weight | -- | -- | -- | 0.321 | -- | Gram (0.01132 Ounce) |
Note 1: Pulse Width Limited By Max. Junction Temperature. (See Fig. 13).
Dimensions (TO-252):
| Dim | Min. (mm) | Typ. (mm) | Max. (mm) | Min. (Inches) | Typ. (Inches) | Max. (Inches) |
|---|---|---|---|---|---|---|
| A | 6.100 | - | 7.100 | 0.240 | - | 0.280 |
| B | 4.800 | - | 5.800 | 0.189 | - | 0.228 |
| C | 1.950 | - | 2.550 | 0.077 | - | 0.100 |
| D | 0.350 | - | 0.750 | 0.014 | - | 0.030 |
| E | 9.250 | - | 10.750 | 0.364 | - | 0.423 |
| F | 5.600 | - | 6.600 | 0.220 | - | 0.260 |
| G | 2.500 | - | 3.100 | 0.098 | - | 0.122 |
| H | 0.650 | - | 1.050 | 0.026 | - | 0.041 |
| J | 2.100 | - | 2.500 | 0.083 | - | 0.098 |
| L | 1.000 | - | 1.400 | 0.039 | - | 0.055 |
| M | 0.350 | - | 0.750 | 0.014 | - | 0.030 |
Packing Information:
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) |
|---|---|---|---|---|---|
| TO-252 | Tape Reel | 34034050 | 5000 | 360x360x260 | 25000 |
2411141613_NH-NJH65R600S_C41784101.pdf
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