Nexperia PDTD123YT 215 NPN Transistor with 2.2 k Bias Resistor and 50 Volt Collector Emitter Voltage
Key Attributes
Model Number:
PDTD123YT,215
Product Custom Attributes
Input Resistor:
2.2kΩ
Resistor Ratio:
4.55
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTD123YT,215
Package:
SOT-23
Product Description
Product Overview
The PDTD123Y series is a family of 500 mA NPN Resistor-Equipped Transistors (RET) designed to simplify circuit design and reduce component count. These transistors feature built-in bias resistors, offering a cost-saving alternative for digital applications in the automotive and industrial segments. They are ideal for controlling IC inputs and switching loads, with a 10 % resistor ratio tolerance and a 500 mA output current capability. Available in SOT346, SOT54, and SOT23 packages.
Product Attributes
- Brand: Nexperia (formerly NXP Semiconductors)
- Type: NPN Resistor-Equipped Transistor (RET)
Technical Specifications
| Model | Package Name | Description | R1 Bias Resistor (Typ) | R2/R1 Bias Resistor Ratio (Typ) | Output Current (DC) | Collector-Emitter Voltage (VCEO) |
|---|---|---|---|---|---|---|
| PDTD123YK | SOT346 (SC-59A, TO-236) | Plastic surface mounted package; 3 leads | 2.2 k | 4.55 | 500 mA | 50 V |
| PDTD123YS | SOT54 (SC-43A, TO-92) | Plastic single-ended leaded (through hole) package; 3 leads | 2.2 k | 4.55 | 500 mA | 50 V |
| PDTD123YT | SOT23 (TO-236AB) | Plastic surface mounted package; 3 leads | 2.2 k | 4.55 | 500 mA | 50 V |
| PDTD123YS[1] | SOT54A | (Also available in SOT54A and SOT54 variant packages) | 2.2 k | 4.55 | 500 mA | 50 V |
Key Features
- Built-in bias resistors
- Reduces component count
- Simplifies circuit design
- Reduces pick and place costs
- 500 mA output current capability
- 10 % resistor ratio tolerance
Applications
- Digital application in automotive and industrial segment
- Cost saving alternative for BC817 series in digital applications
- Controlling IC inputs
- Switching loads
1912111437_Nexperia-PDTD123YT-215_C295450.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
