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quality Nexperia PBSS4350Z135 50 volt NPN transistor with high collector current and low saturation voltage factory
quality Nexperia PBSS4350Z135 50 volt NPN transistor with high collector current and low saturation voltage factory

Nexperia PBSS4350Z135 50 volt NPN transistor with high collector current and low saturation voltage

Key Attributes
Model Number: PBSS4350Z,135
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
2W
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS4350Z,135
Package:
SOT-223
Product Description

Product Overview

The Nexperia PBSS4350Z is a 50 V low VCEsat NPN transistor designed for power management applications. It offers a low collector-emitter saturation voltage, high collector current capability, and high DC current gain at high collector currents, leading to increased efficiency and reduced heat generation. This transistor is AEC-Q101 qualified and is suitable for use in DC/DC converters, supply line switching, battery chargers, linear voltage regulation (LDO), peripheral drivers, and inductive load drivers.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN Transistor
  • Qualification: AEC-Q101
  • Package Type: SOT223 (SC-73)

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 50 V
IC Collector current - - - 3 A
ICM Peak collector current single pulse; tp 1 ms - - 5 A
hFE DC current gain VCE = 2 V; IC = 500 mA; Tamb = 25 C 200 - - -
RCEsat Collector-emitter saturation resistance IC = 2 A; IB = 200 mA; Tamb = 25 C - 110 145 m
VCBO Collector-base voltage open emitter - - 60 V
VEBO Emitter-base voltage open collector - - 6 V
IBM Peak base current single pulse; tp 1 ms - - 1 A
Ptot Total power dissipation Tamb 25 C - 1.35 2 W
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 92 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air [2] - - 62.5 K/W
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tj = 150 C - - 50 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
hFE DC current gain VCE = 2 V; IC = 500 mA; Tamb = 25 C [1] 200 - - -
hFE DC current gain VCE = 2 V; IC = 1 A; Tamb = 25 C [1] 200 - - -
hFE DC current gain VCE = 2 V; IC = 2 A; Tamb = 25 C [1] 100 - - -
VCEsat Collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; Tamb = 25 C [1] - - 90 mV
VCEsat Collector-emitter saturation voltage IC = 1 A; IB = 50 mA; Tamb = 25 C [1] - - 170 mV
VCEsat Collector-emitter saturation voltage IC = 2 A; IB = 200 mA; Tamb = 25 C [1] - - 290 mV
RCEsat Collector-emitter saturation resistance - - 110 145 m
VBEsat Base-emitter saturation voltage IC = 2 A; IB = 200 mA; Tamb = 25 C [1] - - 1.2 V
VBEon Base-emitter turn-on voltage VCE = 2 V; IC = 1 A; Tamb = 25 C [1] - - 1.1 V
fT Transition frequency VCE = 5 V; IC = 100 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 30 pF

[1] Pulse test: tp 300 s; 0.02

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.


2410010132_Nexperia-PBSS4350Z-135_C49693.pdf

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