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quality Nexperia PDTC115TT 215 NPN transistor designed for switching amplification and general purpose circuit factory
quality Nexperia PDTC115TT 215 NPN transistor designed for switching amplification and general purpose circuit factory

Nexperia PDTC115TT 215 NPN transistor designed for switching amplification and general purpose circuit

Key Attributes
Model Number: PDTC115TT,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
100kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC115TT,215
Package:
SOT-23
Product Description

Product Overview

The PDTC115T series comprises NPN resistor-equipped transistors designed for general-purpose switching and amplification. These transistors feature built-in bias resistors, which reduce component count, simplify circuit design, and lower pick-and-place costs. They are suitable for applications such as circuit drivers and inverter and interface circuits.

Product Attributes

  • Brand: Nexperia (formerly NXP)
  • Type: NPN resistor-equipped transistors
  • Internal Resistors: R1 = 100 k, R2 = open

Technical Specifications

Model Package Name Description PNP Complement VCEO (V) IO (mA) R1 Bias Resistor (k)
PDTC115TE SOT416 (SC-75) Plastic surface mounted package; 3 leads PDTA115TE 50 100 70 - 130 (100 Typ)
PDTC115TK SOT346 (SC-59A) Plastic surface mounted package; 3 leads PDTA115TK 50 100 70 - 130 (100 Typ)
PDTC115TM SOT883 (SC-101) Leadless ultra small plastic package; 3 solder lands; body 1.0 0.6 0.5 mm PDTA115TM 50 100 70 - 130 (100 Typ)
PDTC115TS SOT54 (SC-43A) Plastic single-ended leaded (through hole) package; 3 leads PDTA115TS 50 100 70 - 130 (100 Typ)
PDTC115TT SOT23 Plastic surface mounted package; 3 leads PDTA115TT 50 100 70 - 130 (100 Typ)
PDTC115TU SOT323 (SC-70) Plastic surface mounted package; 3 leads PDTA115TU 50 100 70 - 130 (100 Typ)
Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current (DC) - - - 100 mA
R1 Bias resistor 1 (input) - 70 100 130 k
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 5 V
ICM Peak collector current - - - 100 mA
Ptot Total power dissipation SOT416, Tamb 25 C - - 150 mW
Ptot Total power dissipation SOT346, Tamb 25 C - - 250 mW
Ptot Total power dissipation SOT883, Tamb 25 C - - 250 mW
Ptot Total power dissipation SOT54, Tamb 25 C - - 500 mW
Ptot Total power dissipation SOT23, Tamb 25 C - - 250 mW
Ptot Total power dissipation SOT323, Tamb 25 C - - 200 mW
Tstg Storage temperature - -65 - +150 C
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - +150 C
Rth(j-a) Thermal resistance junction to ambient SOT416 - - 833 K/W
Rth(j-a) Thermal resistance junction to ambient SOT346 - - 500 K/W
Rth(j-a) Thermal resistance junction to ambient SOT883 - - 500 K/W
Rth(j-a) Thermal resistance junction to ambient SOT54 - - 250 K/W
Rth(j-a) Thermal resistance junction to ambient SOT23 - - 500 K/W
Rth(j-a) Thermal resistance junction to ambient SOT323 - - 625 K/W
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 50 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA
hFE DC current gain VCE = 5 V; IC = 1 mA 100 - - -
VCEsat Collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA - - 150 mV
Cc Collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz - - 2.5 pF

2410121948_Nexperia-PDTC115TT-215_C552171.pdf

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