Low RDS ON N Channel MOSFET NH NTS096N08D Suitable for Synchronous Rectification and UPS Applications
Key Attributes
Model Number:
NTS096N08D
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
96A
RDS(on):
7.2mΩ@10V
Operating Temperature -:
-85℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 N-channel
Input Capacitance(Ciss):
7.8nF
Output Capacitance(Coss):
220pF
Mfr. Part #:
NTS096N08D
Package:
TO-263
Product Description
Product Overview
The NTS096N08D is an N-Channel Enhancement Mode Trench Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency and low gate charge for high-speed switching. With high EAS for reliability, this MOSFET is 100% UIS and RG tested. Typical applications include DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, and printed circuit board control. It is also suitable for automotive electronics and UPS.
Product Attributes
- Brand: Niuhang (NH)
- Origin: Guangdong Niuhang Specification Electronic Technology Co., Ltd.
- Model ID: NTS096N08D
- Package: TO-263
- Certifications: RoHS COMPLIANT, Pb-Free
- Weight: Approx. 1.472 Grams (0.05192 Ounce)
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 80 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 96 | A | ||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 77 | A | ||
| Drain Current-Pulsed (Note 1) | TJ< 175 | IDM | 384 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 167 | W | ||
| Maximum Power Dissipation | Ta= 100 | PD | 83 | W | ||
| Dissipation Derating Factor Above 25 | DF | 1.11 | W/ | |||
| Junction Temperature | TJ | -55 | 175 | |||
| Storage Temperature Range | TSTD | -55 | 175 | |||
| Avalanche Current, Single Pulse (Note 1) | L= 0.5 mH | IAS | 30 | A | ||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 40 V | EAS | 225 | mJ | ||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 80 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.076 | -- | V/ |
| Drain-Source Leakage Current | VDS= 80 V,VGS=0V | I DSS | -- | -- | 1 | uA |
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | I GSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 20 A,VDS= 5 V | gfs | -- | 19 | -- | S |
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 1.0 | 1.5 | 2.0 | V |
| Drain-Source On Resistance | ID= 20 A,VGS= 10 V | R DS(ON) | -- | 7.20 | 9.60 | m |
| Drain-Source On Resistance | ID= 20 A,VGS= 4.5 V | R DS(ON) | -- | 8.28 | 12.86 | m |
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 0.80 | -- | |
| Input Capacitance | VDS= 40 V | C iss | -- | 7800.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 220.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 200.0 | -- | pF |
| Turn-On Delay Time | VDS= 40 V | t d(on) | -- | 120 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 220 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 320 | -- | ns |
| Turn-Off Rise Time | RG= 10 | t f | -- | 380 | -- | ns |
| Total Gate Charge | VDS= 40 V | Q g | -- | 30.0 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 1.3 | -- | nC |
| Gate-Drain Charge | ID= 20 A | Q gd | -- | 2.4 | -- | nC |
| Max. Diode Forward Current | IS | -- | -- | 96 | A | |
| Max. Pulsed Forward Current | ISM | -- | -- | 336 | A | |
| Diode Forward Voltage | ID= 20 A,VGS=0V | V SD | -- | 0.8 | 1.1 | V |
| Reverse Recovery Time | ID= 20 A,di/dt= 100 A/us | t rr | -- | 140 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 40 V | Q rr | -- | 1.3 | -- | uC |
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | -- | 50.0 | -- | /W |
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | -- | 0.9 | -- | /W |
Note 1: Pulse Width Limited By Max. Junction Temperature. (See Fig. 13).
TO-263 Outline Dimensions:
| Dim | Millimeters | Inches | ||||
|---|---|---|---|---|---|---|
| Min. | Typ. | Max. | Min. | Typ. | Max. | |
| A | 9.50 | -- | 10.50 | 0.374 | -- | 0.413 |
| B | 10.00 | -- | 11.00 | 0.394 | -- | 0.433 |
| C | 8.50 | -- | 9.50 | 0.335 | -- | 0.374 |
| D | 4.00 | -- | 5.00 | 0.157 | -- | 0.197 |
| E | 1.00 | -- | 1.60 | 0.039 | -- | 0.063 |
| F | 0.20 | -- | 0.60 | 0.008 | -- | 0.024 |
| G | 4.45 | -- | 5.25 | 0.175 | -- | 0.207 |
| H | 1.25 | 1.85 | -- | 0.049 | -- | 0.073 |
| J | 1.00 | -- | 1.60 | 0.039 | -- | 0.063 |
| K | 0.60 | -- | 1.00 | 0.024 | -- | 0.039 |
| L | 2.25 | -- | 2.75 | 0.089 | -- | 0.108 |
Packing Information:
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) |
|---|---|---|---|---|---|
| TO-263 | Tape Reel | 35534040 | 800 | 370x360x420 | 8000 |
Recommended wave soldering condition (Pb-free devices):
| Product Peak Temperature | 260 +0/-5 C |
| Soldering Time | 5 +1/-1 seconds |
Recommended temperature profile for IR reflow (Pb-free Assembly):
| Average ramp-up rate (Tsmax to Tp) | 3C/second max. |
| Preheat Temperature Min(TS min) | 150C |
| Preheat Temperature Max(TS max) | 200C |
| Preheat Time(ts min to ts max) | 60-180 seconds |
| Time maintained above: Temperature (TL) | 217C |
| Time maintained above: Time (tL) | 60-150 seconds |
| Peak Temperature(TP) | 260 +0/-5 C |
| Time within 5C of actual peak temperature(tp) | 20-40 seconds |
| Ramp down rate | 6C/second max. |
| Time 25 C to peak temperature | 8 minutes max. |
Note: All temperatures refer to topside of the package, measured on the package body surface.
2412271036_NH-NTS096N08D_C41784122.pdf
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