Nexperia PDTA115ET215 PNP transistors featuring built in 100k bias resistors for general switching
Key Attributes
Model Number:
PDTA115ET,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
130kΩ
Resistor Ratio:
1.2
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA115ET,215
Package:
SOT-23
Product Description
Product Overview
The PDTA115E series are PNP resistor-equipped transistors from NXP Semiconductors. These devices feature built-in bias resistors (R1 = 100 k, R2 = 100 k), simplifying circuit design, reducing component count, and lowering pick-and-place costs. They are suitable for general-purpose switching and amplification, inverter and interface circuits, and circuit driver applications.
Product Attributes
- Brand: NXP Semiconductors
- Type: PNP resistor-equipped transistors
- Built-in Resistors: R1 = 100 k, R2 = 100 k
Technical Specifications
| Model | Package | Marking Code | NPN Complement | Collector-Emitter Voltage (VCEO) (Max.) | Output Current (IO) (DC) (Max.) | R1 Bias Resistor (Typ.) | R2 Bias Resistor (Typ.) |
|---|---|---|---|---|---|---|---|
| PDTA115EE | SOT416 (SC-75) | 5E | PDTC115EE | -50 V | -20 mA | 100 k | 100 k |
| PDTA115EEF | SOT490 (SC-89) | 6B | PDTC115EEF | -50 V | -20 mA | 100 k | 100 k |
| PDTA115EK | SOT346 (SC-59) | 62 | PDTC115EK | -50 V | -20 mA | 100 k | 100 k |
| PDTA115EM | SOT883 (SC-101) | F6 | PDTC115EM | -50 V | -20 mA | 100 k | 100 k |
| PDTA115ES | SOT54 (TO-92) | TA115E | PDTC115ES | -50 V | -20 mA | 100 k | 100 k |
| PDTA115ET | SOT23 | *AB(1) | PDTC115ET | -50 V | -20 mA | 100 k | 100 k |
| PDTA115EU | SOT323 (SC-70) | *7C(1) | PDTC115EU | -50 V | -20 mA | 100 k | 100 k |
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Collector-base voltage (VCBO) | open emitter | - | - | -50 | V |
| Collector-emitter voltage (VCEO) | open base | - | - | -50 | V |
| Emitter-base voltage (VEBO) | open collector | - | - | -10 | V |
| Input voltage (VI) | positive | - | - | +10 | V |
| Input voltage (VI) | negative | - | - | -40 | V |
| Output current (IO) (DC) | - | - | - | -20 | mA |
| Peak collector current (ICM) | - | - | - | -100 | mA |
| Total power dissipation (Ptot) | Tamb 25 C, SOT23 (note 1) | - | - | 250 | mW |
| Total power dissipation (Ptot) | Tamb 25 C, SOT54 (note 1) | - | - | 500 | mW |
| Total power dissipation (Ptot) | Tamb 25 C, SOT323 (note 1) | - | - | 200 | mW |
| Total power dissipation (Ptot) | Tamb 25 C, SOT346 (note 1) | - | - | 250 | mW |
| Total power dissipation (Ptot) | Tamb 25 C, SOT416 (note 1) | - | - | 150 | mW |
| Total power dissipation (Ptot) | Tamb 25 C, SOT490 (notes 1 and 2) | - | - | 250 | mW |
| Total power dissipation (Ptot) | Tamb 25 C, SOT883 (notes 2 and 3) | - | - | 250 | mW |
| Storage temperature (Tstg) | - | -65 | - | +150 | C |
| Junction temperature (Tj) | - | - | - | 150 | C |
| Operating ambient temperature (Tamb) | - | -65 | - | +150 | C |
| Thermal resistance (Rth(j-a)) | Tamb 25 C, SOT23 (note 1) | - | - | 500 | K/W |
| Thermal resistance (Rth(j-a)) | Tamb 25 C, SOT54 (note 1) | - | - | 250 | K/W |
| Thermal resistance (Rth(j-a)) | Tamb 25 C, SOT323 (note 1) | - | - | 625 | K/W |
| Thermal resistance (Rth(j-a)) | Tamb 25 C, SOT346 (note 1) | - | - | 500 | K/W |
| Thermal resistance (Rth(j-a)) | Tamb 25 C, SOT416 (note 1) | - | - | 833 | K/W |
| Thermal resistance (Rth(j-a)) | Tamb 25 C, SOT490 (notes 1 and 2) | - | - | 500 | K/W |
| Thermal resistance (Rth(j-a)) | Tamb 25 C, SOT883 (notes 2 and 3) | - | - | 500 | K/W |
| Collector-base cut-off current (ICBO) | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| Collector-emitter cut-off current (ICEO) | VCE = -30 V; IB = 0 A | - | - | -1 | A |
| Collector-emitter cut-off current (ICEO) | VCE = -30 V; IB = 0 A; Tj = 150 C | - | - | -50 | A |
| Emitter-base cut-off current (IEBO) | VEB = -5 V; IC = 0 A | - | - | -50 | A |
| DC current gain (hFE) | VCE = -5 V; IC = -5 mA | 80 | - | - | - |
| Collector-emitter saturation voltage (VCEsat) | IC = -5 mA; IB = -0.25 mA | - | - | -150 | mV |
| Input-off voltage (Vi(off)) | IC = -100 A; VCE = -5 V | - | -1.2 | -0.5 | V |
| Input-on voltage (Vi(on)) | IC = -1 mA; VCE = -0.3 V | -3 | -1.6 | - | V |
| R1 input resistor | - | 70 | 100 | 130 | k |
| Resistor ratio (R2/R1) | - | 0.8 | 1 | 1.2 | - |
| Collector capacitance (Cc) | IE = ie = 0 A; VCB = -10 V; f = 1 MHz | - | - | 3 | pF |
2410121948_Nexperia-PDTA115ET-215_C552052.pdf
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