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quality N Channel MOSFET MIRACLE POWER MS0006Y with 3.8 Milliohm On Resistance and 100V Drain Source Voltage factory
quality N Channel MOSFET MIRACLE POWER MS0006Y with 3.8 Milliohm On Resistance and 100V Drain Source Voltage factory

N Channel MOSFET MIRACLE POWER MS0006Y with 3.8 Milliohm On Resistance and 100V Drain Source Voltage

Key Attributes
Model Number: MS0006Y
Product Custom Attributes
Mfr. Part #:
MS0006Y
Package:
PDFN-8(5x6)
Product Description

Product Overview

The MS0006Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-frequency switching and synchronous applications, as well as DC/DC converters. It features a 100V drain-source voltage, 140A continuous drain current, and a low typical on-resistance of 3.8m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, is halogen-free and RoHS-compliant, and is 100% EAS guaranteed.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: MS Series
  • Technology: N-Channel Enhancement Mode MOSFET
  • Compliance: Halogen-free; RoHS-compliant
  • Testing: 100% EAS Guaranteed

Technical Specifications

Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
Drain-Source Voltage (VDS) Tc = 25C unless otherwise noted - - 100 V
Gate-Source Voltage (VGS) - - ±20 V
Drain Current-Continuous (ID) TC = 25C - - 140 A
Drain Current-Continuous (ID) TC = 100C - - 90 A
Drain Current-Pulsed (IDM) - - 420 A
Maximum Power Dissipation (PD) TC = 25C - - 156 W
Single Pulsed Avalanche Energy (EAS) - - 169 mJ
Operating and Store Temperature Range (TJ, TSTG) -55 - 150 C
Thermal Characteristics
Thermal Resistance, Junction to Case (RJC) - 0.8 - C/W
Thermal Resistance, Junction to Ambient (RJA) - 45 - C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Drain-Source Breakdown Voltage (BVDSS) VGS = 0V, ID = 250A 100 - - V
Zero Gate Voltage Drain Current (IDSS) VDS = 100V, VGS = 0V - - 1.0 A
Forward Gate Body Leakage Current (IGSS) VDS = 0V, VGS = ±20V - - ±100 nA
Gate Threshold Voltage (VGS(th)) VDS = VGS, ID = 250A 1.5 - 2.5 V
Static Drain-Source On-Resistance (RDS(on)) VGS = 10V, ID = 20A - 3.8 4.8 m
Static Drain-Source On-Resistance (RDS(on)) VGS = 4.5V, ID = 15A - 5.0 6.5 m
Input Capacitance (Ciss) VDS = 50V, VGS = 0V, f = 1.0MHz - 3730 - pF
Output Capacitance (Coss) - 910 - pF
Reverse Transfer Capacitance (Crss) - 15 - pF
Turn-On Delay Time (td(on)) VDD = 50V, VGS = 10V, ID = 50A, RGEN = 1.0 - 8 - ns
Turn-On Rise Time (tr) - 32 - ns
Turn-Off Delay Time (td(off)) - 68 - ns
Turn-Off Fall Time (tf) - 19 - ns
Total Gate Charge (Qg) VDS = 15V, VGS = 0 to 10V, ID = 30A - 58 - nC
Gate-Source Charge (Qgs) - 10 - -
Gate-Drain Charge (Qgd) - 13 - -
Drain-Source Diode Forward Continuous Current (IS) VG = VD = 0V, Force Current - - 140 A
Maximum Pulsed Current (ISM) - - 420 A
Drain-Source Diode Forward Voltage (VSD) VGS = 0V, IS = 10A - - 1.2 V
Body Diode Reverse Recovery Time (Trr) IF = 30A, dIF/dt = 100A/s - 70 - ns
Body Diode Reverse Recovery Charge (Qrr) IF = 30A, dIF/dt = 100A/s - 170 - nC

2504151445_MIRACLE-POWER-MS0006Y_C47361204.pdf

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