High Current NH NSS045N100C N Channel Enhanced Shielded Gate MOSFET for Motor Drives and UPS Systems
Key Attributes
Model Number:
NSS045N100C
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Number:
1 N-channel
Output Capacitance(Coss):
970pF
Pd - Power Dissipation:
227W
Input Capacitance(Ciss):
4.5nF
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
NSS045N100C
Package:
TO-220C
Product Description
Product Overview
The Niuhang Electronic NSS045N100C is an N-Channel Enhanced Shielded Gate Trench Power MOSFET designed for high-efficiency and high-speed switching applications. It features low RDS(ON) for optimal efficiency, low gate charge for rapid switching, and high EAS for enhanced reliability. This MOSFET is 100% UIS and RG tested, making it suitable for demanding applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, and printed circuit board control. It is also well-suited for automotive electronics and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: Niuhang (Trademark: NH)
- Product Line Code: FF
- Model ID: NSS045N100C
- Package: TO-220C
- Certifications: RoHS Compliant, Pb-Free
- Weight: Approx. 2.057 Grams (0.07255 Ounce)
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | VDS Min.@Tj | 100 | V | |||
| Continuous Drain Current | Min.@Ta | 120 | A | |||
| RDS(ON) | Type@10V | 4.5 | m | |||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 120 | A | ||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 77 | A | ||
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | 480 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 227 | W | ||
| Maximum Power Dissipation | Ta= 100 | PD | 91 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | 1.82 | W/ | ||
| Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTD | -55 | 150 | |||
| Avalanche Current,Single Pulse (Note 1) | L= 0.5 mH | IAS | 32 | A | ||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH | EAS | 256 | mJ | ||
| Thermal Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 62.0 | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 0.55 | /W | ||
| Electrical Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Static off Characteristics | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 100 | V | ||
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | 0.114 | V/ | ||
| Drain-Source Leakage Current | VDS= 100 V,VGS=0V | I DSS | 1 | uA | ||
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | I GSS | 100 | nA | ||
| Forward Transconductance | ID= 20 A,VDS= 5 V | gfs | 50 | S | ||
| Static on Characteristics | ||||||
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 20 A,VGS= 10 V | R DS(ON) | 4.50 | 5.50 | m | |
| Drain-Source On Resistance | ID= 20 A,VGS= 4.5 V | R DS(ON) | 5.18 | 7.37 | m | |
| Dynamic Characteristics | ||||||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | 0.65 | |||
| Input Capacitance | VDS= 50 V | C iss | 4500.0 | pF | ||
| Output Capacitance | VGS= 0 V | C oss | 970.0 | pF | ||
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | 30.0 | pF | ||
| Switching Paramters (Test Circuit & Waveform See Fig.14) | ||||||
| Turn-On Delay Time | VDS= 50 V | t d(on) | 28.0 | ns | ||
| Turn-On Rise Time | VGS= 10 V | t r | 32.0 | ns | ||
| Turn-Off Delay Time | RG= 10 | t d(off) | 48.0 | ns | ||
| Turn-Off Rise Time | t f | 27.0 | ns | |||
| Gate Charge Paramters (Test Circuit & Waveform See Fig.15) | ||||||
| Total Gate Charge | VDS= 50 V | Q g | 90.0 | nC | ||
| Gate-Source Charge | VGS= 10 V | Q gs | 28.0 | nC | ||
| Gate-Drain Charge | ID= 20 A | Q gd | 19.0 | nC | ||
| Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17) | ||||||
| Max. Diode Forward Cuurent | I S | 120 | A | |||
| Max. Pulsed Forward Cuurent | I SM | 420 | A | |||
| Diode Forward Voltage | ID= 20 A,VGS=0V | V SD | 0.86 | 1.2 | V | |
| Reverse Recovery Time | ID= 20 A,di/dt= 100 A/us | t rr | 80 | ns | ||
| Reverse Recovery Charge | VGS= 10 V,VDS= 50 V | Q rr | 190 | nC | ||
2505090926_NH-NSS045N100C_C7427702.pdf
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