High Collector Current PNP Transistor Nexperia BCP51TF SOT223 Package for Power Management Circuits
Key Attributes
Model Number:
BCP51TF
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.8W
Transition Frequency(fT):
140MHz
Type:
PNP
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BCP51TF
Package:
SOT-223
Product Description
Product Overview
The Nexperia BCP51T series comprises PNP medium power transistors designed for surface-mounting in a SOT223 (SC-73) plastic package. These transistors offer high collector current capability (IC and ICM), multiple current gain selections, and high power dissipation capabilities. They are AEC-Q101 qualified, making them suitable for demanding applications such as linear voltage regulators, MOSFET drivers, high-side switches, power management, and amplifiers.
Product Attributes
- Brand: Nexperia
- Package Type: SOT223 (SC-73)
- Semiconductor Type: PNP Medium Power Transistor
- Qualification: AEC-Q101 Qualified
Technical Specifications
| Model | NPN Complement | Package | VCEO (Max) | IC (Max) | ICM (Max) | DC Current Gain (hFE) |
|---|---|---|---|---|---|---|
| BCP51T | BCP54T | SOT223 (SC-73) | 45 V | 1 A | 2 A | 63 - 250 (BCP51T) |
| BCP51-10T | BCP54-10T | 63 - 160 (BCP51-10T) | ||||
| BCP51-16T | BCP54-16T | 100 - 250 (BCP51-16T) |
Key Characteristics (Tamb = 25 C unless otherwise specified)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | -45 | V |
| IC | Collector current | - | - | - | -1 | A |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | -2 | A |
| hFE | DC current gain | VCE = -2 V; IC = -150 mA (pulsed; tp 300 s; 0.02) | 63 | - | 250 | - |
| V(BR)CBO | Collector-base breakdown voltage | IC = -100 A; IE = 0 A | -45 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = -2 mA; IE = 0 A | -45 | - | - | V |
| V(BR)EBO | Emitter-base breakdown voltage | IE = -100 A; IC = 0 A | -5 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = -30 V; IE = 0 A | - | - | -100 | nA |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -100 | nA |
| VCEsat | Collector-emitter saturation voltage | IC = -500 mA; IB = -50 mA (pulsed; tp 300 s; 0.02) | - | - | -500 | mV |
| VBE | Base-emitter voltage | VCE = -2 V; IC = -500 mA (pulsed; tp 300 s; 0.02) | - | - | -1 | V |
| fT | Transition frequency | VCE = -5 V; IC = -50 mA; f = 100 MHz | 100 | 140 | - | MHz |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | 7 | - | pF |
Pinning Information
| Pin | Symbol | Description |
|---|---|---|
| 1 | B | Base |
| 2, 4 | C | Collector |
| 3 | E | Emitter |
Ordering Information
| Type number | Package Name | Description |
|---|---|---|
| BCP51T | SC-73 | Plastic, surface-mounted package with increased heatsink; 4 leads SOT223 |
| BCP51-10T | ||
| BCP51-16T |
Marking
| Type number | Marking code |
|---|---|
| BCP51T | BCP51T |
| BCP51-10T | P5110T |
| BCP51-16T | P5116T |
Limiting Values
Tamb = 25 C unless otherwise specified.
| Symbol | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| VCBO | Collector-base voltage | Open emitter | - | -45 | V |
| VCEO | Collector-emitter voltage | Open base | - | -45 | V |
| VEBO | Emitter-base voltage | Open collector | - | -5 | V |
| IC | Collector current | - | - | -1 | A |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | -2 | A |
| IB | Base current | - | - | -0.2 | A |
| IBM | Peak base current | Single pulse; tp 1 ms | - | -0.3 | A |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | 0.6 | W |
| Tamb 25 C [2] | - | 1 | W | ||
| Tamb 25 C [3] | - | 1.3 | W | ||
| Tamb 25 C [4] | - | 1.3 | W | ||
| Tj | Junction temperature | - | - | 150 | C |
| Tamb | Ambient temperature | - | -55 | 150 | C |
| Tstg | Storage temperature | - | -65 | 150 | C |
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated and standard footprint.
2410010201_Nexperia-BCP51TF_C549570.pdf
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