N Channel Enhancement Mode Power MOSFET NH NVT015N10C Designed for AC DC Converters and LED Lighting

Key Attributes
Model Number: NVT015N10C
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
75mΩ@10V,7.5A
Gate Threshold Voltage (Vgs(th)):
2V
Number:
1 N-channel
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
250pF@50V
Gate Charge(Qg):
6nC@50V
Mfr. Part #:
NVT015N10C
Package:
TO-220-3L
Product Description

Product Overview

The NVT015N10C is an N-Channel Enhancement Mode Power MOSFET from Niuhang Electronic Specification Technology Co., Ltd. It features NH's Advanced Planar DMOS Technology, offering low Rds(on) for reduced on-state loss and high EAS for enhanced reliability. This MOSFET is qualified according to JEDEC criteria and is suitable for applications such as AC/DC converters, adaptors and chargers, PC power supplies, and LED drives and lighting. It is 100% UIS tested and 100% VDS tested.

Product Attributes

  • Brand: Niuhang Electronic Specification Technology Co., Ltd.
  • Model: NVT015N10C
  • Technology: NH's Advanced Planar DMOS Technology
  • Certifications: RoHS COMPLIANT, Pb-Free
  • Polarity: N-Channel
  • Mode: Enhancement Mode

Technical Specifications

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage Min.@Tj VDS 100 -- -- V
Current Min.@Ta ID 15 -- -- A
On-State Resistance @10V RDS(ON) -- 0.08 0.01
Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified)
Drain-Source Voltage -- VDS -- -- 100 V
Gate-Source Voltage -- VGS -- -- 20 V
Continuous Drain Current (Note 1) Ta= 25 ID -- -- 15 A
Continuous Drain Current (Note 1) Ta= 100 ID -- -- 10 A
Drain Current-Pulse (Note 1) TJ< 150 IDM -- -- 60 A
Maximum Power Dissipation Ta= 25 PD -- -- 45 W
Power Dissipation Derating Factor Above 25 DF -- 0.36 -- W/
Power Dissipation Derating Factor Ta= 100 DF -- -- 18 W
Avalanche Current, Single Pulse (Note 1) L= 10.0 mH IAS -- 2 -- A
Single Pulse Avalanche Energy (Note 1) L= 10.0 mH EAS -- 20 -- mJ
Thermal Characteristics (Ta=25 Unless Otherwise Specified)
Junction Temperature -- TJ -55 -- 150
Storage Temperature Range -- TSTD -55 -- 150
Thermal Resistance Junction To Ambient Still Air Environment RJA -- 60.0 -- /W
Thermal Resistance Junction-Case Device Mounted On 75mm x 45mm x 2.5mm Alu. Heat. RJC -- 2.80 -- /W
Electrical Characteristics (Ta=25 Unless Otherwise Specified)
Drain-Source Breakdown Voltage VGS=0V,ID=250uA BVDSS 100 -- -- V
Bvdss Temperature Coefficient ID=250uA,Reference25 BVDSS/TJ -- 0.11 -- V/
Drain-Source Leakage Current VDS= 100 V,VGS=0V IDSS -- -- 1 uA
Gate-Body Leakage Current VGS= 20 V,VDS=0V IGSS -- -- 100 nA
Gate Threshold Voltage VGS= VDS ID=250uA VGS(TH) 1.3 2.0 2.8 V
Drain-Source On Resistance ID= 7.5 A,VGS= 10.0 V RDS(ON) -- 0.08 0.01
Drain-Source On Resistance ID= 7.5 A,VGS= 4.5 V RDS(ON) -- 0.10 0.02
Gate Resistance VGS=0V,VDS=0V, Freq.=1MHz Rg -- 2.0 --
Input Capacitance VDS= 50 V Ciss -- 250.0 -- pF
Output Capacitance VGS= 0 V Coss -- 80.0 -- pF
Reverse Transfer Capacitance F= 1 MHZ Crss -- 6.0 -- pF
Total Gate Charge VDS= 50 V Qg -- 6.0 -- nC
Gate-Source Charge VGS= 10.0 V Qgs -- 1.0 -- nC
Gate-Drain Charge ID= 7.5 A Qgd -- 1.2 -- nC
Max. Diode Forward Current -- IS -- -- 15.0 A
Max. Pulsed Forward Current -- ISM -- -- 60.0 A
Diode Forward Voltage ID= 7.5 A,VGS=0V VSD -- 0.67 1.21 V
Reverse Recovery Time IS= 7.5 A,di/dt= 100 A/us trr -- 15.0 -- ns
Reverse Recovery Charge VGS= 0.0 V Qrr -- 53.0 -- nC
Reverse Recovery Current -- IRRM -- 7.1 -- A
Turn-On Delay Time VDS= 50 V td(on) -- 26.0 -- ns
Turn-On Rise Time VGS= 10.0 V tr -- 41.0 -- ns
Turn-Off Delay Time RG= 10.0 td(off) -- 66.0 -- ns
Turn-Off Rise Time -- tf -- 42.0 -- ns
Forward Transconductance ID= 7.5 A,VDS= 5 V gfs -- 15.0 -- S
Outline Dimensions (TO-220C)
Dimension Unit Min. Typ. Max. Inches Min. Inches Typ. Inches Max.
A mm 9.25 -- 10.75 0.3642 -- 0.4232
B mm 4.15 -- 4.95 0.1634 -- 0.1949
C mm 1.10 -- 1.65 0.0433 -- 0.0650
D mm 0.25 -- 0.65 0.0098 -- 0.0256
E mm 14.50 -- 16.70 0.5709 -- 0.6575
F mm 8.40 -- 9.95 0.3307 -- 0.3917
L mm 12.15 -- 14.30 0.4783 -- 0.5630
H mm 3.00 -- 3.80 0.1181 -- 0.1496
J mm 1.05 -- 1.60 0.0413 -- 0.0630
K mm 0.65 -- 0.95 0.0256 -- 0.0374
M mm 2.10 -- 2.90 0.0827 -- 0.1142
O mm 3.20 -- 4.10 0.1260 -- 0.1614
P mm 2.45 -- 3.10 0.0965 -- 0.1220
Recommended Layout Dimensions (TO-220C)
Dimension Unit Min. Typ. Max. Inches Min. Inches Typ. Inches Max.
A mm -- 1.60 -- -- 0.0630 --
B mm -- 1.60 -- -- 0.0630 --
C mm -- 2.54 -- -- 0.1000 --
D mm -- 1.00 -- -- 0.0394 --
Marking Information
Marking Content NH=Niuhang Trademark, FF=Product Line Code, YWW=Date Code, LLWWF=Internal Code, NVT015N10C=Model
Packing Information
Package Type Package Code Weight Approx(g/Pcs) Package Method Quantity (Pcs/Min. Pack.) Quantity (Pcs/Inner Box) Quantity (Pcs/Carton)
TO-220C P1 2.057 Tube 50 1000 5000

2512081640_NH-NVT015N10C_C7427708.pdf

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