N Channel Enhancement Mode Power MOSFET NH NVT015N10C Designed for AC DC Converters and LED Lighting
Product Overview
The NVT015N10C is an N-Channel Enhancement Mode Power MOSFET from Niuhang Electronic Specification Technology Co., Ltd. It features NH's Advanced Planar DMOS Technology, offering low Rds(on) for reduced on-state loss and high EAS for enhanced reliability. This MOSFET is qualified according to JEDEC criteria and is suitable for applications such as AC/DC converters, adaptors and chargers, PC power supplies, and LED drives and lighting. It is 100% UIS tested and 100% VDS tested.
Product Attributes
- Brand: Niuhang Electronic Specification Technology Co., Ltd.
- Model: NVT015N10C
- Technology: NH's Advanced Planar DMOS Technology
- Certifications: RoHS COMPLIANT, Pb-Free
- Polarity: N-Channel
- Mode: Enhancement Mode
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| Product Summary | |||||||
| Drain-Source Voltage | Min.@Tj | VDS | 100 | -- | -- | V | |
| Current | Min.@Ta | ID | 15 | -- | -- | A | |
| On-State Resistance | @10V | RDS(ON) | -- | 0.08 | 0.01 | ||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | |||||||
| Drain-Source Voltage | -- | VDS | -- | -- | 100 | V | |
| Gate-Source Voltage | -- | VGS | -- | -- | 20 | V | |
| Continuous Drain Current (Note 1) | Ta= 25 | ID | -- | -- | 15 | A | |
| Continuous Drain Current (Note 1) | Ta= 100 | ID | -- | -- | 10 | A | |
| Drain Current-Pulse (Note 1) | TJ< 150 | IDM | -- | -- | 60 | A | |
| Maximum Power Dissipation | Ta= 25 | PD | -- | -- | 45 | W | |
| Power Dissipation Derating Factor | Above 25 | DF | -- | 0.36 | -- | W/ | |
| Power Dissipation Derating Factor | Ta= 100 | DF | -- | -- | 18 | W | |
| Avalanche Current, Single Pulse (Note 1) | L= 10.0 mH | IAS | -- | 2 | -- | A | |
| Single Pulse Avalanche Energy (Note 1) | L= 10.0 mH | EAS | -- | 20 | -- | mJ | |
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | |||||||
| Junction Temperature | -- | TJ | -55 | -- | 150 | ||
| Storage Temperature Range | -- | TSTD | -55 | -- | 150 | ||
| Thermal Resistance Junction To Ambient | Still Air Environment | RJA | -- | 60.0 | -- | /W | |
| Thermal Resistance Junction-Case | Device Mounted On 75mm x 45mm x 2.5mm Alu. Heat. | RJC | -- | 2.80 | -- | /W | |
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | |||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BVDSS | 100 | -- | -- | V | |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BVDSS/TJ | -- | 0.11 | -- | V/ | |
| Drain-Source Leakage Current | VDS= 100 V,VGS=0V | IDSS | -- | -- | 1 | uA | |
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | IGSS | -- | -- | 100 | nA | |
| Gate Threshold Voltage | VGS= VDS ID=250uA | VGS(TH) | 1.3 | 2.0 | 2.8 | V | |
| Drain-Source On Resistance | ID= 7.5 A,VGS= 10.0 V | RDS(ON) | -- | 0.08 | 0.01 | ||
| Drain-Source On Resistance | ID= 7.5 A,VGS= 4.5 V | RDS(ON) | -- | 0.10 | 0.02 | ||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | Rg | -- | 2.0 | -- | ||
| Input Capacitance | VDS= 50 V | Ciss | -- | 250.0 | -- | pF | |
| Output Capacitance | VGS= 0 V | Coss | -- | 80.0 | -- | pF | |
| Reverse Transfer Capacitance | F= 1 MHZ | Crss | -- | 6.0 | -- | pF | |
| Total Gate Charge | VDS= 50 V | Qg | -- | 6.0 | -- | nC | |
| Gate-Source Charge | VGS= 10.0 V | Qgs | -- | 1.0 | -- | nC | |
| Gate-Drain Charge | ID= 7.5 A | Qgd | -- | 1.2 | -- | nC | |
| Max. Diode Forward Current | -- | IS | -- | -- | 15.0 | A | |
| Max. Pulsed Forward Current | -- | ISM | -- | -- | 60.0 | A | |
| Diode Forward Voltage | ID= 7.5 A,VGS=0V | VSD | -- | 0.67 | 1.21 | V | |
| Reverse Recovery Time | IS= 7.5 A,di/dt= 100 A/us | trr | -- | 15.0 | -- | ns | |
| Reverse Recovery Charge | VGS= 0.0 V | Qrr | -- | 53.0 | -- | nC | |
| Reverse Recovery Current | -- | IRRM | -- | 7.1 | -- | A | |
| Turn-On Delay Time | VDS= 50 V | td(on) | -- | 26.0 | -- | ns | |
| Turn-On Rise Time | VGS= 10.0 V | tr | -- | 41.0 | -- | ns | |
| Turn-Off Delay Time | RG= 10.0 | td(off) | -- | 66.0 | -- | ns | |
| Turn-Off Rise Time | -- | tf | -- | 42.0 | -- | ns | |
| Forward Transconductance | ID= 7.5 A,VDS= 5 V | gfs | -- | 15.0 | -- | S | |
| Outline Dimensions (TO-220C) | |||||||
| Dimension | Unit | Min. | Typ. | Max. | Inches Min. | Inches Typ. | Inches Max. |
| A | mm | 9.25 | -- | 10.75 | 0.3642 | -- | 0.4232 |
| B | mm | 4.15 | -- | 4.95 | 0.1634 | -- | 0.1949 |
| C | mm | 1.10 | -- | 1.65 | 0.0433 | -- | 0.0650 |
| D | mm | 0.25 | -- | 0.65 | 0.0098 | -- | 0.0256 |
| E | mm | 14.50 | -- | 16.70 | 0.5709 | -- | 0.6575 |
| F | mm | 8.40 | -- | 9.95 | 0.3307 | -- | 0.3917 |
| L | mm | 12.15 | -- | 14.30 | 0.4783 | -- | 0.5630 |
| H | mm | 3.00 | -- | 3.80 | 0.1181 | -- | 0.1496 |
| J | mm | 1.05 | -- | 1.60 | 0.0413 | -- | 0.0630 |
| K | mm | 0.65 | -- | 0.95 | 0.0256 | -- | 0.0374 |
| M | mm | 2.10 | -- | 2.90 | 0.0827 | -- | 0.1142 |
| O | mm | 3.20 | -- | 4.10 | 0.1260 | -- | 0.1614 |
| P | mm | 2.45 | -- | 3.10 | 0.0965 | -- | 0.1220 |
| Recommended Layout Dimensions (TO-220C) | |||||||
| Dimension | Unit | Min. | Typ. | Max. | Inches Min. | Inches Typ. | Inches Max. |
| A | mm | -- | 1.60 | -- | -- | 0.0630 | -- |
| B | mm | -- | 1.60 | -- | -- | 0.0630 | -- |
| C | mm | -- | 2.54 | -- | -- | 0.1000 | -- |
| D | mm | -- | 1.00 | -- | -- | 0.0394 | -- |
| Marking Information | |||||||
| Marking | Content | NH=Niuhang Trademark, FF=Product Line Code, YWW=Date Code, LLWWF=Internal Code, NVT015N10C=Model | |||||
| Packing Information | |||||||
| Package Type | Package Code | Weight Approx(g/Pcs) | Package Method | Quantity (Pcs/Min. Pack.) | Quantity (Pcs/Inner Box) | Quantity (Pcs/Carton) | |
| TO-220C | P1 | 2.057 | Tube | 50 | 1000 | 5000 | |
2512081640_NH-NVT015N10C_C7427708.pdf
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