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quality NPN Resistor Equipped Transistor PDTC114YU QX by Nexperia for Automotive and Industrial Applications factory
quality NPN Resistor Equipped Transistor PDTC114YU QX by Nexperia for Automotive and Industrial Applications factory

NPN Resistor Equipped Transistor PDTC114YU QX by Nexperia for Automotive and Industrial Applications

Key Attributes
Model Number: PDTC114YU-QX
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
200mW
DC Current Gain:
100@5mA,5V
Input Resistor:
10kΩ
Resistor Ratio:
4.7
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC114YU-QX
Package:
SOT-323-3
Product Description

Product Overview

The Nexperia PDTC114YU-Q is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It offers a 100 mA output current capability and features built-in bias resistors, which simplify circuit design, reduce component count, and lower pick and place costs. Qualified according to AEC-Q101, this transistor is a cost-saving alternative for the BC847-Q series in digital applications, suitable for controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia
  • Type: NPN Resistor-Equipped Transistor (RET)
  • Complementary PNP: PDTA114YU
  • Certifications: Qualified according to AEC-Q101, Recommended for automotive applications
  • Package Type: SOT323 (SC-70)

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) - 7 10 13 k
R2/R1 Bias resistor ratio - 3.7 4.7 5.7 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 6 V
VI Input voltage Positive - - 40 V
VI Input voltage Negative - - -6 V
Ptot Total power dissipation Tamb 25 C - - 200 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient In free air - - 625 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 150 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C 100 - - -
VCEsat Collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA; Tamb = 25 C - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C - 0.7 0.5 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 1 mA; Tamb = 25 C 1.4 0.8 - V
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C - 230 - MHz

2410121947_Nexperia-PDTC114YU-QX_C5311549.pdf

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