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quality High current NPN transistor Nexperia BCX19 235 for general purpose amplification and switching tasks factory
quality High current NPN transistor Nexperia BCX19 235 for general purpose amplification and switching tasks factory

High current NPN transistor Nexperia BCX19 235 for general purpose amplification and switching tasks

Key Attributes
Model Number: BCX19,235
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BCX19,235
Package:
SOT-23
Product Description

Product Overview

The Nexperia BCX19 is an NPN general purpose transistor designed for high current (500 mA) and low voltage (45 V) applications. It is suitable for general purpose amplification and saturated switching and driver applications. This transistor is housed in a SOT23 plastic package.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Product Type: NPN general purpose transistor
  • Package Type: SOT23 (plastic surface mounted package; 3 leads)
  • PNP Complement: BCX17
  • Marking Code: U1*

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
LIMITING VALUES (In accordance with the Absolute Maximum Rating System (IEC 60134))
VCBO collector-base voltage open emitter - - 50 V
VCEO collector-emitter voltage open base; IC = 10 mA - - 45 V
VEBO emitter-base voltage open collector - - 5 V
IC collector current (DC) - - - 500 mA
ICM peak collector current - - - 1 A
IBM peak base current - - - 200 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 - - 250 mW
Tstg storage temperature - -65 - +150 °C
Tj junction temperature - - - 150 °C
Tamb operating ambient temperature - -65 - +150 °C
THERMAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
Rth(j-a) thermal resistance from junction to ambient note 1 - 500 - K/W
CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
ICBO collector cut-off current IE = 0; VCB = 20 V - - 100 nA
ICBO collector cut-off current IE = 0; VCB = 20 V; Tj = 150 °C - - 5 µA
IEBO emitter cut-off current IC = 0; VEB = 5 V - - 100 nA
hFE DC current gain VCE = 1 V; note 1; IC = 100 mA 100 - 600 -
hFE DC current gain VCE = 1 V; note 1; IC = 300 mA 70 - - -
hFE DC current gain VCE = 1 V; note 1; IC = 500 mA 40 - - -
VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 2 - - 620 mV
VBE base-emitter voltage IC = 500 mA; VCE = 1 V; notes 1 and 2 - - 1.2 V
Cc collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz - 5 - pF
fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 - - MHz

2410121943_Nexperia-BCX19-235_C549660.pdf

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