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quality NPN PNP transistor Nexperia BC847QAPNZ designed for mobile device applications in compact DFN1010B 6 factory
quality NPN PNP transistor Nexperia BC847QAPNZ designed for mobile device applications in compact DFN1010B 6 factory

NPN PNP transistor Nexperia BC847QAPNZ designed for mobile device applications in compact DFN1010B 6

Key Attributes
Model Number: BC847QAPNZ
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
100MHz
Type:
NPN+PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC847QAPNZ
Package:
DFN-6(1x1)
Product Description

Product Overview

The Nexperia BC847QAPN is a general-purpose NPN/PNP transistor designed for switching and amplification applications, particularly in mobile devices. This AEC-Q101 qualified component is housed in an ultra-small, leadless DFN1010B-6 (SOT1216) plastic package, offering a low profile of 0.37 mm. Its design contributes to reduced component count and lower pick-and-place costs in manufacturing.

Product Attributes

  • Brand: Nexperia
  • Certifications: AEC-Q101 qualified
  • Package Type: DFN1010B-6 (SOT1216)
  • Technology: NPN/PNP General-Purpose Transistor

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Quick Reference Data
VCEO Collector-emitter voltage Open base - - 45 V
IC Collector current - - - 100 mA
hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 C 200 - 450 -
Limiting Values
VCBO Collector-base voltage Open emitter - - 50 V
VCEO Collector-emitter voltage Open base - - 45 V
VEBO Emitter-base voltage Open collector - - 6 V
IC Collector current - - - 100 mA
ICM Peak collector current - - - 200 mA
IBM Peak base current Single pulse; tp 1 ms - - 100 mA
Ptot Total power dissipation Tamb 25 C [1] - - 230 mW
Ptot Total power dissipation Per device; Tamb 25 C [1] - - 350 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -55 - 150 C
Tstg Storage temperature - -65 - 150 C
Thermal Characteristics
Rth(j-a) Thermal resistance junction to ambient Per transistor; in free air [1] - - 543 K/W
Rth(j-a) Thermal resistance junction to ambient Per device; in free air [1] - - 357 K/W
Characteristics
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tamb = 25 C - - 15 nA
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 C 200 - 450 -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 100 mV
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 5 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 300 mV
VBEsat Base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - 760 - mV
VBEsat Base-emitter saturation voltage IC = 100 mA; IB = 5 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 900 mV
VBE Base-emitter voltage VCE = 5 V; IC = 2 mA; Tamb = 25 C 600 660 725 mV
VBE Base-emitter voltage VCE = 5 V; IC = 10 mA; Tamb = 25 C - 710 820 mV
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 4 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz
NF Noise figure VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 1 MHz; B = 200 Hz; Tamb = 25 C - - 10 dB
Ce Emitter capacitance TR1 (NPN); VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C - 11 - pF
Ce Emitter capacitance TR2 (PNP); VEB = -0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C - 10 - pF
Package Outline
Package DFN1010B-6 (SOT1216) Dimensions See Figure 16 - - mm

2410010201_Nexperia-BC847QAPNZ_C549490.pdf

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